Enhancement Mode Gallium Nitride (GaN) HEMT - GaNEXUS FET, 100V, 1.1 mOhm

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Overview

100V high-frequency enhancement mode GaN FETs in a compact, dual-cooling footprint are optimized for high-frequency operation. They combine low RDS(on) with ultra-low gate and output charges (Qg, Qgd, Qoss), along with zero reverse-recovery charge, enabling higher switching frequencies, improved power density, and increased efficiency. These devices are ideal for DC-DC converters, synchronous rectification, and motor drive aplications across computing, industrial, and telecom markets.

  • DCDC
  • Synchronous Rectifier to 48/54V
  • 40-80V BLDC Motor Drive
  • Telecom
  • Computing
  • Industrial
  • Consumer
  • Optimized for High Frequency Operations (>500 kHz up to 5 MHz)
  • No Reverse Recovery Charge
  • Ultra Low Gate Charge and Output Charge (Qg, Qgd, Qoss)
  • Capable of Reverse Conduction
  • Thermally Enhanced Dual Cooling Package

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Drain Source Voltage (V)

RDS(on) Typ (mΩ)

RDS(on) Max (mΩ)

Qg Typ (nC)

Qoss Typ (nC)

Qgd Typ (nC)

ID (A)

ID Pulse (A)

Reference Price

ENGNTLEF1D5N10GN1TXG

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CAD Model

Pb

A

H

P

PDSO-N8 5.00x6.00x0.87, 1.27P

3

260

REEL

2500

No

100

1.1

1.5

19

100

3

474

980

$3.3333

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NTLEF1D5N10GN1TWG

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CAD Model

Pb

A

H

P

PDSO-N8 5.00x6.00x0.87, 1.27P

3

260

REEL

2500

No

100

1.1

1.5

19

100

3

474

980

Price N/A

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