High Voltage GaN FETs | NTD100N70GN1TXG

Enhancement Mode Gallium Nitride (GaN) HEMT - GaNEXUS FET, 700V, 75 mOhm

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Overview

700V high-frequency enhancement mode GaN FETs are optimized for high-frequency operation. They combine low RDS(on) with ultra-low gate and output charges (Qg, Qgd, Qoss), along with zero reverse-recovery charge, enabling higher switching frequencies, improved power density, and increased efficiency. These devices are ideal for DC-DC converters, synchronous rectification, and motor drive aplications across computing, industrial, and telecom markets.

  • Consumer Adapter
  • Telecom
  • Computing
  • Industrial
  • Consumer
  • Ultra High Switching Frequency
  • No Reverse-Recovery Charge
  • Low Gate Charge, Low Output Charge
  • ESD Safeguard

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NTD100N70GN1TXG

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CAD Model

Pb

A

H

P

PDSO-E3 6.10x6.60x2.30, 2.28P

209AA

3

260

REEL

2500

No

700

75

100

3.8

36.3

1.4

21

41

$0.7893

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