High Voltage GaN FETs | NTBL035N65GN1

Enhancement Mode Gallium Nitride (GaN) HEMT - GaNEXUS FET, 650V, 27 mOhm

Active

Datasheet

Buy

Overview

650V high-frequency enhancement mode GaN FETs are optimized for high-frequency operation. They combine low RDS(on) with ultra-low gate and output charges (Qg, Qgd, Qoss), along with zero reverse-recovery charge, enabling higher switching frequencies, improved power density, and increased efficiency. These devices are ideal for DC-DC converters, synchronous rectification, and motor drive aplications across computing, industrial, and telecom markets.

  • 800/400V DCDC
  • PSU
  • AI
  • Cloud-Server
  • Telecom
  • High Performance Computing and Industrial
  • Optimized for High Switching Frequency (500 kHz to 2 MHz)
  • Low Gate Charge and Output Charge (Qoss, Qg)
  • No Reverse-Recovery Charge
  • Capable of Reverse Conduction

Tools and Resources

Product services, tools and other useful resources related to NTBL035N65GN1

CAD Model

CAD Model

Material Composition

Product Change Notification

Buy/Parametrics Table

Search

Close Search

Products:

2

Share

Sort by

Product Groups:

┗

Orderable Parts:

2

Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Drain Source Voltage (V)

RDS(on) Typ (mΩ)

RDS(on) Max (mΩ)

Qg Typ (nC)

Qoss Typ (nC)

Qgd Typ (nC)

ID (A)

ID Pulse (A)

Reference Price

ENGNTBL035N65GN1TXG

Loading...

Active

CAD Model

Pb

A

H

P

PDSO-F9 10.38x9.90x2.30, 1.20P

207AA

3

260

REEL

1200

No

650

27

35

14

155

5.7

64

127

$7.7331

More Details

NTBL035N65GN1TXG

Loading...
Find Replacements

Product Preview

CAD Model

Pb

A

H

P

PDSO-F9 10.38x9.90x2.30, 1.20P

207AA

3

260

REEL

1200

No

650

27

35

14

155

5.7

64

127

Price N/A

More Details

Show More

1-25 of 25

Products per page

Jump to :

1
contact sales icon

Support on the go

Find and compare products, get support and connect with onsemi sales team.