Digital Transistors (BRTs) | IMH20TR1

Dual NPN Bipolar Digital Transistor (BRT)

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Overview

This series of bipolar digital transistors is designed to replace a single device and its external resistor bias network. The bipolar digital transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. This eliminates these individual components by integrating them into a single device and can reduce both system cost and board space.

  • Higher Current Hand held applications.

  • Low VCC (sat) 80 mV max at IC/IB = 50 mA/2.5 mA
  • High Current: IC = 600 mA max
  • This is a Pb−Free Device

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IMH20TR1G

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CAD Model

Pb

A

H

P

SC-74R-6

318AA

1

260

REEL

3000

N

Dual NPN

0.6

15

100

2.2

-

-

-

-

$0.09

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Reliability Data

Die Related Summary Data

Device: IMH20TR1G

Equivalent to wafer fab process: SST

Product Technology

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Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

SST

0

4654891639

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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