Digital Transistors (BRTs) | EMG2DXV5

Dual NPN Bipolar Digital Transistor (BRT)

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Overview

The Dual NPN Bipolar Digital Transistor is designed to replace a single device and its external resistor bias network. The Dual PNP Bipolar Digital Transistor contains a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. This eliminates these individual components by integrating them into a single device. This can reduce both system cost and board space. The device is housed in the SOT-553 package which is designed for low power surface mount applications.

  • TBD

  • TBD

  • Simplifies Circuit Design
  • Reduces Board Space
  • Reduces Component Count

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EMG2DXV5T1G

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CAD Model

Pb

A

H

P

SOT-553

463B-01

1

260

REEL

4000

N

Dual NPN

0.1

50

80

47

47

1

0

0

$0.0681

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EMG2DXV5T5G

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CAD Model

Pb

A

H

P

SOT-553

463B-01

1

260

REEL

8000

N

Dual NPN

0.1

50

80

47

47

1

-

-

Price N/A

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Reliability Data

Die Related Summary Data

Device: EMG2DXV5T5G

Equivalent to wafer fab process: SST

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

SST

0

4654891639

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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