Digital Transistors (BRTs) | EMF5XV6

Complementary Bipolar Digital Transistor (BRT)

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Overview

This dual die device contains a Low Vce(sat) PNP Transistor and an electrically isolated NPN Transistor with a Monolithic Bias Resistor Network.

  • Simplifies Circuit Design
  • Reduces Board Space
  • Reduces Component Count

  • TBD

  • This is a Pb-Free Device
  • These are Pb-Free Devices

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IC Continuous (A)

V(BR)CEO Min (V)

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Reference Price

EMF5XV6T1G

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CAD Model

Pb

A

H

P

SOT-563

463A-01

1

260

REEL

4000

F

Dual NPN BRT & PNP TXR

0.1

50

80

47

47

1

0

0

$0.1067

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EMF5XV6T5G

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

SOT-563

463A-01

1

260

REEL

8000

N

Dual NPN BRT & PNP TXR

0.1

50

80

47

47

1

-

-

Price N/A

More Details

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Reliability Data

Die Related Summary Data

Device: EMF5XV6T5G

Equivalent to wafer fab process: SST

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

SST

0

4654891639

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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