Darlington Complementary Silicon Power Transistor

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Overview

The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The TIP131, TIP132 (NPN); and TIP137 (PNP) are complementary devices.

  • High DC Current Gain. hfe=2500 Typ at Ic=4.0 Adc
  • Collector-Emitter Sustaining Voltage at 30 mAdc: 80 Vdc Min TIP131 & 100 Vdc Min TIP132, TIP137
  • Low Collector-Emitter Saturation Voltage: 2.0 Vdc Max at Ic=4.0 Adc & 3.0 Vdc Max at Ic=6.0 Adc
  • Monolithic Construction with Built-In Base-Emitter Shunt Resistors.
  • T0-220AB Compact Package
  • Pb-Free Packages are Available

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CAD Models

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Polarity

IC Continuous (A)

V(BR)CEO Min (V)

VCE(sat) Max (V)

hFE Min (k)

hFE Max (k)

fT Min (MHz)

Reference Price

TIP137

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Obsolete

CAD Model

Pb

A

H

P

TO-220-3

NA

0

TUBE

50

N

PNP

-

100

2

1

15

-

Price N/A

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TIP137G

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Obsolete

CAD Model

Pb

A

H

P

TO-220-3

NA

0

TUBE

50

N

PNP

-

100

2

1

15

-

Price N/A

More Details

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