Darlington Transistors | MJD128

8.0 A, 120 V PNP Darlington Bipolar Power Transistor

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Overview

The PNP Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications.

  • NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • These are PbFree Devices

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IC Continuous (A)

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hFE Max (k)

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Reference Price

MJD128T4G

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CAD Model

Pb

A

H

P

DPAK-3

369C

1

260

REEL

2500

N

PNP

8

120

2

1

12

4

$0.3969

More Details

NJVMJD128T4G

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Active

CAD Model

Pb

A

H

P

DPAK-3

369C

1

260

REEL

2500

N

PNP

8

120

2

1

12

4

$0.2727

More Details

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Reliability Data

Die Related Summary Data

Device: MJD128T4G

Equivalent to wafer fab process: BPT

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

BPT

8

3017145632

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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