10 A, 100 V NPN Darlington Bipolar Power Transistor

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Overview

The 10 A, 100 V NPN Bipolar Power Transistor is for use as an output devices in complementary general purpose amplifier applications. The BDV65B (NPN) and BDV64B (PNP) are complementary devices.

  • High DC Current Gain HFE = 1000 (min.) @ 5 Adc
  • Monolithic Construction with Built-in Base Emitter Shunt Resistors
  • These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices. Please see our website at www.onsemi.com for specific Pb-free orderable part numbers, or contact your local ON Semiconductor sales office or representative.

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Orderable Parts:

2

Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

IC Continuous (A)

V(BR)CEO Min (V)

VCE(sat) Max (V)

hFE Min (k)

hFE Max (k)

fT Min (MHz)

Reference Price

BDV65B

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Obsolete

CAD Model

Pb

A

H

P

SOT-93-3 / TO-218-3

NA

0

TUBE

30

N

NPN

10

100

2

1

-

-

Price N/A

More Details

BDV65BG

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Obsolete

CAD Model

Pb

A

H

P

TO-247

NA

0

TUBE

30

N

NPN

10

100

2

1

-

-

Price N/A

More Details

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