Darlington Transistors | BDV64B

10 A, 100 V PNP Darlington Bipolar Power Transistor

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Overview

The 10 A, 100 V NPN Bipolar Power Transistor is for use as an output devices in complementary general purpose amplifier applications. The BDV65B (NPN) and BDV64B (PNP) are complementary devices.

  • High DC Current Gain HFE = 1000 (min.) @ 5 Adc
  • Monolithic Construction with Built-in Base Emitter Shunt Resistors
  • These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices. Please see our website at www.onsemi.com for specific Pb-free orderable part numbers, or contact your local ON Semiconductor sales office or representative.

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BDV64B

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Obsolete

CAD Model

Pb

A

H

P

SOT-93-3 / TO-218-3

340D-02

NA

0

TUBE

30

N

PNP

10

100

2

1

-

-

Price N/A

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BDV64BG

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Active

CAD Model

Pb

A

H

P

TO-247

340L

NA

0

TUBE

30

Y

PNP

10

100

2

1

-

-

$1.5065

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Reliability Data

Die Related Summary Data

Device: BDV64BG

Equivalent to wafer fab process: BPT

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

BPT

8

3017145632

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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