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/Subject (These P -Channel enhancement mode field effect transistors are produced using onsemi's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 180 mA DC and can deliver current up to 1 A.)
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onsemi
NDS0605 - P-Channel Enhancement Mode Field Effect Transistor
These P -Channel enhancement mode field effect transistors are produced using onsemi's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 180 mA DC and can deliver current up to 1 A.
2024-01-10T10:48:45+01:00
BroadVision, Inc.
2024-01-10T10:49:53+01:00
2024-01-10T10:49:53+01:00
Acrobat Distiller 23.0 (Windows)
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