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#                                                                                                                         #
#  Saber model for HGTG12N60A4 SMPS-IGBT                                            #
#  Created by Alexander H. Craig acraig@harris.com                                      #
#  Harris semiconductor                                                                                    #
#  Created on January 1999                                                                               #
#  This model is for the HGTG12N60A,HGTP12N60A & HGT1S12N60AS 
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template hgtg12n60a4
electrical    a, g, k
{
igbt_b.. \
	 model attributes=(\
a_ref=102m,\#
a=102m,\#		Device active area
agd=56.5m,\#		Gate drain overlap active area 
alpha=2.5,\# 
bvcbo=600,\#		Avalanche breakdown voltage 
bvn=8,\#		Avalanche multiplication exp
bvcbotexp=0.35,\# 
bvntexp=.50,\# 
cgs=1.2n,\#		Gate source capacitance 
coxd=3.16n,\#		Gate drain oxide capacitance 
dvtl=3,\#		delta vt at low currents
fc=500m,\#		Fwd bias non ideal junction cap coef 
fxjbe=500m,\#		depletion charge at body edge change
fxjbm=750m,\#		fraction charge at overlap middle
gmin=1p,\#		Minimum slope for MOSFETS
isne=1.0e-13,\#		Emitter electron saturation current 
isnetexp=1.50,\#		Temperature exponent for isne
kf=3.5,\# 		ratio of kp in triode 
kftexp=-0.0,\#		Temperature exponent for 
kp=16.0,\#		MOSFET channel transconductance
kptexp=0.8,\#		Temperature exponent for kp
kfl=0.01,\#
mj=500m,\#		Junction grading coefficient 
mun=1500,\#		Electron mobility in n- epi layer 
mup=450,\#		Hole mobility in n- egi layer 
nb=2.75e14,\#		Base doping concretion 
nbuf=2.9e17,\#		Buffer layer doping concentration
pb=.5,\#			C-B junction built in potential 
pbuf=0.62,\#		E-B junction built in potential*
rs=0.004,\#		Intrinsic anode series resistance
rs_tc1=0.01,\#		temperature exponent1 of rs
rs_tc2=1.0e-6,\#		temperature exponent2 of rs
rg=1,\#
taubuf=20.5n,\#		High level excess carrier lifetime  	
taubufexp=0.5,\#		Temperature exponent for taubuf
tauhl=270n,\#		High level excess carrier lifetime  
tauhltexp=1.5,\#
taurat=.017,\#		ratio low to high level lifetime
taurat_texp=13,\#		temperature exponent of taurat
taumod=13,\#		low level lifetime knee charge/qb
taugen=300n,\#		generation lifetime
taugen_texp=1.0,\#	temperature exponent of taugen
theta=.3,\#
thetatexp=0,\#
vbigd=1,\#		built-in potential in neck region
vt=7.5,\#		MOSFET channel threshold  
vtd=-1,\#		Gate drain overlap depletion
vttco=-6m,\#		Temperature exponent for vt
vtdtco=0m,\#		Temperature exponent for vtd
wb=4.8m,\#
wbuf=.6m)#
igbt_b.igbt1 a g k = model = attributes
}