#************************* Power Discrete MOSFET Electrical Model *************************
# Product: FCP20N60
# Package: TO-220
# 600V N-Channel MOSFET
# This model is based on room temperature.
# -----------------------------------------------------------------------------------------
template FCP201N60 d,g,s
electrical d,g,s
{
res.Rg g 1  = 1.58
m.M1 2 1 3 3 = model=DMOS, L=1u, W=1u
m..MODEL DMOS = (TYPE=_N, VTO=4.75, KP=20, THETA=0.0416, VMAX=1.0E5, LEVEL=3, NFS=8e11)
res.rsomething 2 3 = 1meg
c.Cgs 1 3 = 2285p
res.Rd 20 4 = 0.07, TC1=0.01
dp.Dds 3 4 = model=DDS
dp..MODEL DDS = (BV=600, M=0.38, CJO=7080p, VJ=0.44)
dp.Dbody 3 d = model=DBODY
dp..MODEL DBODY =(ISL=2.0E-12, NL=1.00, RS=0.0084, TT=552n)
res.Ra 4 2 = 0.07
res.Rs 3 5 = 0.001
l.Ls 5 30 = 1.0n
m.M2 1 8 6 6 = model=INTER
spe.E2 8 6 4 1 = 2
m..MODEL INTER = (TYPE=_N, VTO=0, KP=10, LEVEL=1)
c.CGDmax 7 4 = 3450p
res.Rcgd 7 4 = 10meg
dp.Dgd 6 4 = model=DGD
res.Rdgd 4 6 = 10meg
m..MODEL DGD = (M=0.76, CJO=3450p, VJ=0.4)
m.M3 7 9 1 1 = model=INTER
spe.E3 9 1 4 1 = -2
}

#************************** Power Discrete MOSFET Thermal Model ************************
template thermal_model TH TL
thermal_c TH, TL
{
ctherm.CTHERM1 TH 6 = 1.64e-4
ctherm.CTHERM2 6 5  = 5.08e-3
ctherm.CTHERM3 5 4  = 2.34e-2
ctherm.CTHERM4 4 3  = 4.22e-2
ctherm.CTHERM5 3 2  = 4.72e-1
ctherm.CTHERM6 2 TL = 5.82e-1

rtherm.RTHERM1 TH 6 = 3.30e-3
rtherm.RTHERM2 6 5  = 6.88e-3
rtherm.RTHERM3 5 4  = 1.18e-2
rtherm.RTHERM4 4 3  = 1.62e-1
rtherm.RTHERM5 3 2  = 1.96e-1
rtherm.RTHERM6 2 TL = 2.20e-1
}
# -----------------------------------------------------------------------------------------
# Creation: Nov-07-2007   Rev: 0.0
# Fairchild Semiconductor