*NDP6030PL/NDB6030PL at Temp. Electrical Model 
*----------------------------------------------
.SUBCKT NDP6030PL 20 10 30 50
*20=DRAIN 10=GATE 30=SOURCE 50=VTEMP
Rg 10 11x 1
Rdu 12x 1 1u
M1 2 1 4x 4x DMOS L=1u W=1u
.MODEL DMOS PMOS(VTO=-1.4 KP=1.4E+1
+THETA=0.1 VMAX=4.5E5 LEVEL=3)
Cgs 1 5x 950p
Rd 20 4 3.1E-3
Dds 4 5x DDS
.MODEL DDS D(M=1.37E-1 VJ=1.27E-3 CJO=1478p)
Dbody 20 5x DBODY
.MODEL DBODY D(IS=1.26E-12 N=1.019424 RS=.00068 TT=35.76n)
Ra 4 2 3.1E-3 
Rs 5x 5 0.5m
Ls 5 30 0.5n
M2 1 8 6 6 INTER
E2 8 6 4 1 2
.MODEL INTER PMOS(VTO=0 KP=10 LEVEL=1)
Cgdmax 7 4 3745p
Rcgd 7 4 10meg
Dgd 4 6 DGD
Rdgd 4 6 10meg
.MODEL DGD D(M=1.49E-1 VJ=4.68E-7 CJO=3745p)
M3 7 9 1 1 INTER
E3 9 1 4 1 -2
*ZX SECTION
EOUT 4x 6x poly(2) (1x,0) (3x,0) 0 0 0 0 1
FCOPY 0 3x VSENSE 1
RIN 1x 0 1G
VSENSE 6x 5x 0
RREF 3x 0 10m
*TEMP SECTION
ED 101 0 VALUE {V(50,100)}
VAMB 100 0 25
EKP 1x 0 101 0 .008
*VTO TEMP SECTION
EVTO 102 0 101 0 .0015
EVT 11x 12x 102 0 1
*DIODE THEMO BREAKDOWN SECTION
EBL VB1 VB2 101 0 .08
VBLK VB2 0 30
D DB1 20 DBLK
.MODEL DBLK D(IS=1E-14 CJO=.1p RS=.1)
EDB 0 DB1 VB1 0 1
.ENDS NDP6030PL
*NDP6030PL/NDB6030PL (Rev.A) 7/31/02   (TT: If=7.5A) **ST