*FDV305N at Temp. Electrical Model *------------------------------------- .SUBCKT FDV305N 20 10 30 50 *20=DRAIN 10=GATE 30=SOURCE 50=VTEMP Rg 10 11x 1 Rdu 12x 1 1u M1 2 1 4x 4x DMOS L=1u W=1u .MODEL DMOS NMOS(VTO=1.2 KP=5.05 +THETA=.133333 VMAX=2.5E5 LEVEL=3) Cgs 1 5x 119p Rd 20 4 3E-2 Dds 5x 4 DDS .MODEL DDS D(M=7.41E-1 VJ=2.92 CJO=51p) Dbody 5x 20 DBODY .MODEL DBODY D(IS=1.93E-11 N=1.20248 RS=0.0022 TT=5.75n) Ra 4 2 3E-2 Rs 5x 5 0.5m Ls 5 30 0.5n M2 1 8 6 6 INTER E2 8 6 4 1 2 .MODEL INTER NMOS(VTO=0 KP=10 LEVEL=1) Cgdmax 7 4 102p Rcgd 7 4 10meg Dgd 6 4 DGD Rdgd 6 4 10meg .MODEL DGD D(M=3.45E-1 VJ=5.15E-2 CJO=102p) M3 7 9 1 1 INTER E3 9 1 4 1 -2 *ZX SECTION EOUT 4x 6x poly(2) (1x,0) (3x,0) 0 0 0 0 1 FCOPY 0 3x VSENSE 1 RIN 1x 0 1G VSENSE 6x 5x 0 RREF 3x 0 10m *TEMP SECTION ED 101 0 VALUE {V(50,100)} VAMB 100 0 25 EKP 1x 0 101 0 .065 *VTO TEMP SECTION EVTO 102 0 101 0 .0005 EVT 12x 11x 102 0 1 *DIODE THEMO BREAKDOWN SECTION EBL VB1 VB2 101 0 .08 VBLK VB2 0 20 D 20 DB1 DBLK .MODEL DBLK D(IS=1E-14 CJO=.1p RS=.1) EDB DB1 0 VB1 0 1 .ENDS FDV305N *FDV305N (Rev.A) 7/1/02 **ST