.SUBCKT FDMS86320 2 1 3 ****************************************************************** ** Fairchild Discrete Modeling Group ** ****************************************************************** ** Website www.fairchildsemi.com\models ** ****************************************************************** ** (C) Copyright 2009 Fairchild Semiconductor Corporation ** ** All rights reserved ** ** ** ** FDMS86320 Spice model ** ** Revision RevA, 02 September 2011 ** ****************************************************************** *Nom Temp 25 deg C Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Lgate 1 9 2.814e-9 Ldrain 2 5 0.004e-9 Lsource 3 7 0.504e-9 RLgate 1 9 28.14 RLdrain 2 5 0.04 RLsource 3 7 5.04 Rgate 9 6 0.43 * Shielded Gate D_D1 100 5 D_SG_cap1 D_D2 100 101 D_SG_cap2 R_R1 101 7 0.465 C_C1 6 101 268e-12 .MODEL D_SG_cap1 D (IS=1e-9 n=1 RS=5e-3 CJO=1.44e-9 M=0.54 t_abs=25) .MODEL D_SG_cap2 D (IS=1e-9 n=1 RS=5e-3 CJO=1.2e-9 M=0.5 t_abs=25) It 7 17 1 Ebreak 11 7 17 7 89.2 Rbreak 17 7 RbreakMOD 1 .MODEL RbreakMOD RES (TC1=0.68e-3 TC2=-1.2e-6) .MODEL DbodyMOD D (IS=0.83e-12 n=1 RS=4.737e-3 TRS1=2.5e-3 TRS2=1e-6 + CJO=0.3e-9 M=0.36 TT=3e-9 XTI=3.3);0.94 .MODEL DbreakMOD D (RS=30e-3 TRS1=1e-3 TRS2=1e-6 ) Rsource 7a 7 0.51e-3 Rdrain 5 16 RdrainMOD 7.6e-3 .MODEL RdrainMOD RES (TC1=5.4e-3 TC2=11e-6) M_BSIM3 16 6 7a 7a Bsim3 W=3.1 L=0.96e-6 NRS=0 NRD=0 .MODEL Bsim3 NMOS (LEVEL=7 VERSION=3.1 MOBMOD=3 CAPMOD=2 paramchk=1 NQSMOD=0 *Process Parameters + TOX=1000e-10 ;Oxide thickness + XJ=0.28e-6 ;Channel depth + NCH=1.95e17 ;Channel concentration *Channel Current + U0=1000 VSAT=500000 DROUT=1.2 + DELTA=0.14 PSCBE2=0 RSH=0.51e-3 *Threshold voltage + VTH0=3.28 *Sub-threshold characteristics + VOFF=-0.43 NFACTOR=1 *Junction diodes and Capacitance + LINT=0.16e-6 DLC=0.16e-6 + CGSO=347e-12 CGSL=0 CGDO=1e-12 CGDL=170e-12 ;433 + CJ=0 CF=0 CKAPPA=0.25 * Temperature parameters + KT1=-2.0 KT2=0 UA1=1e-9 + NJ=10) .ENDS