.SUBCKT FDMS8090 2 1 3 ****************************************************************** ** Fairchild Discrete Modeling Group ** ****************************************************************** ** Website www.fairchildsemi.com\models ** ****************************************************************** ** (C) Copyright 2012 Fairchild Semiconductor Corporation ** ** All rights reserved ** ** ** ** FDMS8090 Spice model ** ** Revision RevA, 04 Oct 2012 ** ****************************************************************** *Nom Temp 25 deg C Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Lgate 1 9 0.975e-9 Ldrain 2 5 0.004e-9 Lsource 3 7 0.185e-9 RLgate 1 9 9.75 RLdrain 2 5 0.04 RLsource 3 7 1.85 Rgate 9 6 0.54 D_D1 100 5 D_SG_cap D_D2 100 101 D_SG_cap R_R1 101 7 0.47 C_C1 6 101 103e-12 .MODEL D_SG_cap D (IS=1e-9 n=1 RS=5e-3 CJO=1.75e-9 M=0.54 t_abs=25) It 7 17 1 Ebreak 11 7 17 7 108.6 Rbreak 17 7 RbreakMOD 1 .MODEL RbreakMOD RES (TC1=0.7e-3 TC2=-0.25e-6) .MODEL DbodyMOD D (IS=1.5e-12 n=1 RS=3.0e-3 TRS1=3.5e-3 TRS2=1e-6 + CJO=0.443e-9 M=0.395 TT=1e-9 XTI=4.2) .MODEL DbreakMOD D (RS=8e-3 TRS1=1e-3 TRS2=1e-6 ) Rsource 7a 7 0.489e-3 Rdrain 5 16 RdrainMOD 7.5e-3 .MODEL RdrainMOD RES (TC1=6e-3 TC2=15e-6) M_BSIM3 16 6 7a 7a Bsim3 W=3.23 L=1.15e-6 NRS=0 NRD=0 .MODEL Bsim3 NMOS (LEVEL=7 VERSION=3.1 MOBMOD=3 CAPMOD=2 paramchk=1 NQSMOD=0 + TOX=1000e-10 + XJ=0.62e-6 + NCH=0.96e17 + U0=700 VSAT=500000 DROUT=1.8 + DELTA=0.04 PSCBE2=0 RSH=0.489e-3 *Threshold voltage + VTH0=3.8 + VOFF=-0.13 NFACTOR=1.4 + LINT=0.175e-6 DLC=0.175e-6 + CGSO=128e-12 CGSL=0 CGDO=0.5e-12 CGDL=115e-12 + CJ=0 CF=0 CKAPPA=0.8 * Temperature parameters + KT1=-2.3 KT2=0 UA1=10e-9 + NJ=10) .ENDS *