.SUBCKT FDMS8026S 2 1 3 ****************************************************************** ** Fairchild Discrete Modeling Group ** ****************************************************************** ** Website www.fairchildsemi.com\models ** ****************************************************************** ** (C) Copyright 2009 Fairchild Semiconductor Corporation ** ** All rights reserved ** ** ** ** FDMS8026S Spice model ** ** Revision RevA, 7 Sept 2010 ** ****************************************************************** *Nom Temp 25 deg C Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Dschottky 7 5 DSchottkyMOD Lgate 1 9 2.958e-9 Ldrain 2 5 0.004e-9 Lsource 3 7 1.13e-9 RLgate 1 9 29.58 RLdrain 2 5 0.04 RLsource 3 7 11.3 Rgate 9 6 0.7 * Shielded Gate D_D1 100 5 D_SG_cap D_D2 100 101 D_SG_cap R_R1 101 7 1.01 C_C1 6 101 185e-12 .MODEL D_SG_cap D (IS=1e-9 n=1 RS=4e-3 CJO=1.96e-9 M=0.52 t_abs=25) It 7 17 1 Ebreak 11 7 17 7 33.25 Rbreak 17 7 RbreakMOD 1 .MODEL RbreakMOD RES (TC1=0.6e-3 TC2=-1e-6) .MODEL DbodyMOD D (IS=7e-12 n=1 RS=3.15e-3 TRS1=2.0e-3 TRS2=1e-6 + CJO=0.25e-9 M=0.35 TT=3e-9 XTI=1) .MODEL DSchottkyMOD D (IS=2.75e-6 n=1.05 RS=150e-3 TRS1=3e-3 TRS2=1e-6 + CJO=0.25e-9 M=0.35 TT=3e-9 XTI=-17.5) .MODEL DbreakMOD D (RS=30e-3 TRS1=1e-3 TRS2=1e-6 ) Rsource 7a 7 2.211e-3 Rdrain 5 16 RdrainMOD 1.0e-3 .MODEL RdrainMOD RES (TC1=10.5e-3 TC2=19e-6) M_BSIM3 16 6 7a 7a Bsim3 W=4.158 L=0.624e-6 NRS=0 NRD=0 .MODEL Bsim3 NMOS (LEVEL=7 VERSION=3.1 MOBMOD=3 CAPMOD=2 paramchk=1 NQSMOD=0 *Process Parameters + TOX=500e-10 ;Oxide thickness + XJ=0.195e-6 ;Channel depth + NCH=1.34e17 ;Channel concentration *Channel Current + U0=670 VSAT=500000 DROUT=1.2 + DELTA=0.12 PSCBE2=0.00001 RSH=2.211e-3 *Threshold voltage + VTH0=1.485 *Sub-threshold characteristics + VOFF=-0.10 NFACTOR=1.25 *Junction diodes and Capacitance + LINT=0.12e-6 DLC=0.1445e-6 + CGSO=168e-12 CGSL=0 CGDO=7e-12 CGDL=145e-12 + CJ=0 CF=0 CKAPPA=0.6 * Temperature parameters + KT1=-0.95 KT2=0 UA1=1e-9 + NJ=10) .ENDS