.SUBCKT FDMS7608S_Q1 2 1 3 ****************************************************************** ** Fairchild Discrete Modeling Group ** ****************************************************************** ** Website www.fairchildsemi.com\models ** ****************************************************************** ** (C) Copyright 2009 Fairchild Semiconductor Corporation ** ** All rights reserved ** ** ** ** FDMS7608S_Q1 Spice model ** ** Revision RevA, 21 June 2011 ** ** Revision RevA1, 15 Jan 2013 Added thermal model ** ****************************************************************** *Nom Temp 25 deg C Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Lgate 1 9 0.954e-9 Ldrain 2 5 0.004e-9 Lsource 3 7 0.234e-9 RLgate 1 9 9.54 RLdrain 2 5 0.04 RLsource 3 7 2.34 Rgate 9 6 1.09 * Shielded Gate D_D1 100 5 D_SG_cap1 D_D2 100 101 D_SG_cap2 R_R1 101 7 3.7 C_C1 6 101 76e-12 .MODEL D_SG_cap1 D (IS=1e-9 n=1 RS=5e-3 CJO=1.9e-9 M=0.6 t_abs=25) .MODEL D_SG_cap2 D (IS=1e-9 n=1 RS=5e-3 CJO=0.7e-9 M=0.6 t_abs=25) It 7 17 1 Ebreak 11 7 17 7 33.3 Rbreak 17 7 RbreakMOD 1 .MODEL RbreakMOD RES (TC1=0.56e-3 TC2=-1e-6) .MODEL DbodyMOD D (IS=1.2e-12 n=1 RS=4.2e-3 TRS1=2.2e-3 TRS2=1e-6 + CJO=0.33e-9 M=0.38 TT=3e-9 XTI=2.7); 1.0 .MODEL DbreakMOD D (RS=30e-3 TRS1=1e-3 TRS2=1e-6 ) Rsource 7a 7 1.157e-3 Rdrain 5 16 RdrainMOD 4.41e-3 .MODEL RdrainMOD RES (TC1=3.7e-3 TC2=10e-6) M_BSIM3 16 6 7a 7a Bsim3 W=2.45 L=0.8e-6 NRS=0 NRD=0 .MODEL Bsim3 NMOS (LEVEL=7 VERSION=3.1 MOBMOD=3 CAPMOD=2 paramchk=1 NQSMOD=0 *Process Parameters + TOX=500e-10 ;Oxide thickness + XJ=0.16e-6 ;Channel depth + NCH=1.55e17 ;Channel concentration *Channel Current + U0=1000 VSAT=500000 DROUT=1.2 + DELTA=0.27 PSCBE2=0 RSH=1.157e-3 *Threshold voltage + VTH0=1.89 *Sub-threshold characteristics + VOFF=-0.16 NFACTOR=1.1 *Junction diodes and Capacitance + LINT=0.135e-6 DLC=0.135e-6 + CGSO=124e-12 CGSL=0 CGDO=6.5e-12 CGDL=160e-12 ;155 + CJ=0 CF=0 CKAPPA=0.25 * Temperature parameters + KT1=-1.05 KT2=0 UA1=2.0e-9 + NJ=10) .ENDS .SUBCKT FDMS7608S_Q2 2 1 3 ****************************************************************** ** Fairchild Discrete Modeling Group ** ****************************************************************** ** Website www.fairchildsemi.com\models ** ****************************************************************** ** (C) Copyright 2009 Fairchild Semiconductor Corporation ** ** All rights reserved ** ** ** ** FDMS7608S_Q2 Spice model ** ** Revision RevA, 23 June 2011 ** ** Revision RevA1, 15 Jan 2013 Added thermal model ** ****************************************************************** *Nom Temp 25 deg C Dbody 7 5 DbodyMOD Dschottky 7 5 DSchottkyMOD Dbreak 5 11 DbreakMOD Lgate 1 9 1.949e-9 Ldrain 2 5 0.004e-9 Lsource 3 7 0.091e-9 RLgate 1 9 19.49 RLdrain 2 5 0.04 RLsource 3 7 0.91 Rgate 9 6 0.59 * Shielded Gate D_D1 100 5 D_SG_cap1 D_D2 100 101 D_SG_cap2 R_R1 101 7 1.68 C_C1 6 101 131e-12 .MODEL D_SG_cap1 D (IS=1e-9 n=1 RS=5e-3 CJO=1.8e-9 M=0.6 t_abs=25) .MODEL D_SG_cap2 D (IS=1e-9 n=1 RS=5e-3 CJO=1.2e-9 M=0.6 t_abs=25) It 7 17 1 Ebreak 11 7 17 7 32.5 Rbreak 17 7 RbreakMOD 1 .MODEL RbreakMOD RES (TC1=0.7e-3 TC2=-2.7e-6) .MODEL DbodyMOD D (IS=4.0e-12 n=1 RS=3.4e-3 TRS1=2.1e-3 TRS2=1e-6 + CJO=0.18e-9 M=0.35 TT=3e-9 XTI=1) ;0.54 .MODEL DSchottkyMOD D (IS=1.7e-6 n=1.05 RS=215e-3 TRS1=2.7e-3 TRS2=1e-6 + CJO=0.18e-9 M=0.35 TT=3e-9 XTI=-19.5) .MODEL DbreakMOD D (RS=30e-3 TRS1=1e-3 TRS2=1e-6 ) Rsource 7a 7 1.148e-3 Rdrain 5 16 RdrainMOD 2.72e-3 .MODEL RdrainMOD RES (TC1=4.4e-3 TC2=9e-6) M_BSIM3 16 6 7a 7a Bsim3 W=3.53 L=0.624e-6 NRS=0 NRD=0 .MODEL Bsim3 NMOS (LEVEL=7 VERSION=3.1 MOBMOD=3 CAPMOD=2 paramchk=1 NQSMOD=0 *Process Parameters + TOX=500e-10 ;Oxide thickness + XJ=0.195e-6 ;Channel depth + NCH=1.38e17 ;Channel concentration *Channel Current + U0=620 VSAT=500000 DROUT=1.2 + DELTA=0.13 PSCBE2=0 RSH=1.148e-3 *Threshold voltage + VTH0=1.73 *Sub-threshold characteristics + VOFF=-0.19 NFACTOR=1.1 *Junction diodes and Capacitance + LINT=0.1445e-6 DLC=0.1445e-6 + CGSO=148e-12 CGSL=0 CGDO=7.7e-12 CGDL=145e-12 ;185 + CJ=0 CF=0 CKAPPA=0.6 * Temperature parameters + KT1=-0.97 KT2=0 UA1=1.0e-9 + NJ=10) .ENDS *Thermal model with min pad area of 2oz copper *01/15/2013 .SUBCKT FDMS7608S_q1_Rthja TH TL CTHERM1 TH 6 4e-4 CTHERM2 6 5 1e-3 CTHERM3 5 4 8.4e-3 CTHERM4 4 3 4e-2 CTHERM5 3 2 4e-1 CTHERM6 2 TL 1.5 RTHERM1 TH 6 0.5 RTHERM2 6 5 2 RTHERM3 5 4 6 RTHERM4 4 3 22 RTHERM5 3 2 34 RTHERM6 2 TL 53 .ENDS FDMS7608S_q1_Rthja *Thermal model with min pad area of 2oz copper *01/15/2013 .SUBCKT FDMS7608S_q2_Rthja TH TL CTHERM1 TH 6 1.2e-3 CTHERM2 6 5 1.7e-3 CTHERM3 5 4 1.5e-2 CTHERM4 4 3 10e-2 CTHERM5 3 2 4e-1 CTHERM6 2 TL 1.5 RTHERM1 TH 6 0.5 RTHERM2 6 5 2 RTHERM3 5 4 4 RTHERM4 4 3 14 RTHERM5 3 2 33 RTHERM6 2 TL 51 .ENDS FDMS7608S_q2_Rthja