.SUBCKT FDMS6673BZ 2 1 3
*Nom Temp 25 deg C
Dbody 5 7 DbodyMOD
Dbreak 7 11 DbreakMOD
Lgate 1 9 2.191e-9
Ldrain 2 5 0.004e-9
Lsource 3 7 0.795e-9
RLgate 1 9 21.91
RLdrain 2 5 0.04
RLsource 3 7 7.95
Rgate 9 6 4.66
It 7 17 1
Ebreak 5 11 17 7 -33.1
Rbreak 17 7 RbreakMOD 1
.MODEL RbreakMOD RES (TC1=0.74e-3 TC2=-0.4e-6)
.MODEL DbodyMOD D (IS=4.5e-12 n=1 RS=3.7e-3 TRS1=1.5e-3 TRS2=1e-6
+ CJO=3.3e-10 M=0.5 TT=0.1e-9 XTI=3)
.MODEL DbreakMOD D (RS=100e-3 TRS1=1e-3 TRS2=1e-6 )
Rsource 7a 7 0.626e-3
Rdrain 5 16 RdrainMOD 3.8e-3
.MODEL RdrainMOD RES (TC1=4.5e-3 TC2=7.0e-6)
M_BSIM3 16 6 7a 7a Bsim3 W=9.508 L=1.1e-6 NRS=0 NRD=0
.MODEL Bsim3 PMOS (LEVEL=7 VERSION=3.1 MOBMOD=3 CAPMOD=2 paramchk=1 NQSMOD=0
*Process Parameters
+ TOX=550e-10 ;Oxide thickness
+ XJ=0.3e-6 ;Channel depth
+ NCH=1.36e17 ;Channel concentration
*Channel Current
+ U0=240 VSAT=500000 DROUT=1.8
+ DELTA=0.37 PSCBE2=0.00001 RSH=0.626e-3
*Threshold voltage
+ VTH0=-1.87
*Sub-threshold characteristics
+ VOFF=-0.16 NFACTOR=1
*Junction diodes and Capacitance
+ LINT=0.3e-6 DLC=0.3e-6
+ CGSO=96e-12 CGSL=43e-12 CGDO=24e-12 CGDL=354e-12
+ CJ=0 CF=0 CKAPPA=1.2
* Temperature parameters
+ KT1=-0.9 KT2=0 UA1=2.0e-9
+ NJ=10)
* FDMS6673BZ (Rev.A)	11/6/2008
* SP
.ENDS