.SUBCKT FDMS5672 2 1 3
*Nom Temp 25 deg C
Dbody 7 5 DbodyMOD
Dbreak 5 11 DbreakMOD
Lgate 1 9 1.789e-9
Ldrain 2 5 0.004e-9
Lsource 3 7 0.16e-9
RLgate 1 9 17.89
RLdrain 2 5 0.04
RLsource 3 7 1.6
Rgate 9 6 1.3
It 7 17 1
Ebreak 11 7 17 7 69.5
Rbreak 17 7 RbreakMOD 1
.MODEL RbreakMOD RES (TC1=0.92e-3 TC2=-0.4e-6)
.MODEL DbodyMOD D (IS=3.5e-12 n=1 RS=3.7e-3 TRS1=2.8e-3 TRS2=1e-6
+ CJO=1.289e-9 M=0.45 TT=23.5e-9 XTI=4)
.MODEL DbreakMOD D (RS=300e-3 TRS1=1e-3 TRS2=1e-6 )
Rdrain 5 16 RdrainMOD 6.7e-3
.MODEL RdrainMOD RES (TC1=6.0e-3 TC2=8.0e-6)
M_BSIM3 16 6 7 7 Bsim3 W= 4.47 L=1.85e-6 NRS=1 NRD=0
.MODEL Bsim3 NMOS (LEVEL=7 VERSION=3.1 MOBMOD=3 CAPMOD=2 paramchk=1 NQSMOD=0
*Process Parameters
+ TOX=1020e-10 ;Oxide thickness
+ XJ=1.4e-6 ;Channel depth
+ NCH=1.8e17 ;Channel concentration
*Channel Current
+ U0=1400 VSAT=5e5 DROUT=1.5
+ DELTA=0.15 PSCBE2=0 RSH=1.0e-3
*Threshold voltage
+ VTH0=2.9
*Sub-threshold characteristics
+ VOFF=-0.05 NFACTOR=1
*Junction diodes and Capacitance
+ LINT=0.3e-6 DLC=0.36e-6
+ CGSO=89e-12 CGSL=0 CGDO=0e-12 CGDL=150e-12
+ CJ=0 CF=0 CKAPPA=3.5
* Temperature parameters
+ KT1=-1.7 KT2=0 UA1=3.3e-9
+ NJ=10)
* 17 Jan 2007 Rev.A_SP
.ENDS