.SUBCKT FDMS5352 2 1 3
*Nom Temp 25 deg C
Dbody 7 5 DbodyMOD
Dbreak 5 11 DbreakMOD
Lgate 1 9 2.337e-9
Ldrain 2 5 0.004e-9
Lsource 3 7 0.153e-9
Rgate 9 6 1.3
It 7 17 1
Ebreak 11 7 17 7 67.2
Rbreak 17 7 RbreakMOD 1
.MODEL RbreakMOD RES (TC1=1e-3 TC2=-1e-6)
.MODEL DbodyMOD D (IS=6.2e-12 n=1 RS=1.2e-3 TRS1=2.0e-3 TRS2=1e-6
+ CJO=7.5e-10 M=0.4 TT=2.0e-9 XTI=3)
.MODEL DbreakMOD D (RS=80e-3 TRS1=1e-3 TRS2=1e-6 )
Rsource 7a 7 0.347e-3
Rdrain 5 16 RdrainMOD 3.9e-3
.MODEL RdrainMOD RES (TC1=6.5e-3 TC2=1.6e-5)
M_BSIM3 16 6 7a 7a Bsim3 W=7.657 L=1.58e-6 NRS=0 NRD=0
.MODEL Bsim3 NMOS (LEVEL=7 VERSION=3.1 MOBMOD=3 CAPMOD=2 paramchk=1 NQSMOD=0
*Process Parameters
+ TOX=500e-10 ;Oxide thickness
+ XJ=0.91e-6 ;Channel depth
+ NCH=1.1e17 ;Channel concentration
*Channel Current
+ U0=800 VSAT=800000 DROUT=1.8
+ DELTA=0.013 PSCBE2=0.00001 RSH=0.347e-3
*Threshold voltage
+ VTH0=2.24
*Sub-threshold characteristics
+ VOFF=-0.1 NFACTOR=1.3
*Junction diodes and Capacitance
+ LINT=0.31e-6 DLC=0.31e-6
+ CGSO=120e-12 CGSL=0 CGDO=4e-12 CGDL=250e-12
+ CJ=0 CF=0 CKAPPA=1.5
* Temperature parameters
+ KT1=-1.2 KT2=0 UA1=5e-9
+ NJ=10)
* Rev A		2/15/2008	SP
.ENDS