.SUBCKT FDMS3626S_Q1 2 1 3 ****************************************************************** ** Fairchild Discrete Modeling Group ** ****************************************************************** ** Website www.fairchildsemi.com\models ** ****************************************************************** ** (C) Copyright 2009 Fairchild Semiconductor Corporation ** ** All rights reserved ** ** ** ** FDMS3626S_Q1 Spice model ** ** Revision RevA, 21 December 2011 ** ****************************************************************** *Nom Temp 25 deg C Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Lgate 1 9 2.915e-9 Ldrain 2 5 0.004e-9 Lsource 3 7 0.862e-9 RLgate 1 9 29.15 RLdrain 2 5 0.04 RLsource 3 7 8.62 Rgate 9 6 0.58 * Shielded Gate D_D1 100 5 D_SG_cap1 D_D2 100 101 D_SG_cap2 R_R1 101 7 2.04 C_C1 6 101 150e-12 .MODEL D_SG_cap1 D (IS=1e-9 n=1 RS=5e-3 CJO=1.41e-9 M=0.57 t_abs=25) .MODEL D_SG_cap2 D (IS=1e-9 n=1 RS=5e-3 CJO=1.0e-9 M=0.55 t_abs=25) It 7 17 1 Ebreak 11 7 17 7 32.7 Rbreak 17 7 RbreakMOD 1 .MODEL RbreakMOD RES (TC1=0.55e-3 TC2=-1e-6) .MODEL DbodyMOD D (IS=6e-12 n=1 RS=2.6e-3 TRS1=3e-3 TRS2=1e-6 + CJO=0.35e-9 M=0.4 TT=3e-9 XTI=1) ;1.05 .MODEL DbreakMOD D (RS=30e-3 TRS1=1e-3 TRS2=1e-6) Rsource 7a 7 1.711e-3 Rdrain 5 16 RdrainMOD 1.8e-3 .MODEL RdrainMOD RES (TC1=6.8e-3 TC2=17e-6) M_BSIM3 16 6 7a 7a Bsim3 W=2.99 L=0.515e-6 NRS=0 NRD=0 .MODEL Bsim3 NMOS (LEVEL=7 VERSION=3.1 MOBMOD=3 CAPMOD=2 paramchk=1 NQSMOD=0 *Process Parameters + TOX=300e-10 ;Oxide thickness + XJ=0.0929e-6 ;Channel depth + NCH=2.33e17 ;Channel concentration *Channel Current + U0=800 VSAT=500000 DROUT=1.2 + DELTA=0.3 PSCBE2=0 RSH=1.711e-3 *Threshold voltage + VTH0=0.3 *Sub-threshold characteristics + VOFF=-0.1 NFACTOR=1.1 *Junction diodes and Capacitance + LINT=0.125e-6 DLC=0.125e-6 + CGSO=200e-12 CGSL=0 CGDO=7e-12 CGDL=220e-12 ;250 + CJ=0 CF=0 CKAPPA=0.6 * Temperature parameters + KT1=-0.7 KT2=0 UA1=4e-9 + NJ=10) .ENDS FDMS3626S_Q1 .SUBCKT FDMS3626S_Q2 2 1 3 ****************************************************************** ** Fairchild Discrete Modeling Group ** ****************************************************************** ** Website www.fairchildsemi.com\models ** ****************************************************************** ** (C) Copyright 2009 Fairchild Semiconductor Corporation ** ** All rights reserved ** ** ** ** FDMS3626S_Q2 Spice model ** ** Revision RevA, 26 October 2011 ** ****************************************************************** *Nom Temp 25 deg C Dbody 7 5 DbodyMOD Dschottky 7 5 DSchottkyMOD Dbreak 5 11 DbreakMOD Lgate 1 9 0.853e-9 Ldrain 2 5 0.004e-9 Lsource 3 7 0.218e-9 RLgate 1 9 8.53 RLdrain 2 5 0.04 RLsource 3 7 2.18 Rgate 9 6 1.02 * Shielded Gate D_D1 100 5 D_SG_cap1 D_D2 100 101 D_SG_cap2 R_R1 101 7 1.15 C_C1 6 101 239e-12 .MODEL D_SG_cap1 D (IS=1e-9 n=1 RS=5e-3 CJO=2.52e-9 M=0.6 t_abs=25) .MODEL D_SG_cap2 D (IS=1e-9 n=1 RS=5e-3 CJO=1.9e-9 M=0.6 t_abs=25) It 7 17 1 Ebreak 11 7 17 7 31.55 Rbreak 17 7 RbreakMOD 1 .MODEL RbreakMOD RES (TC1=0.9e-3 TC2=-0.9e-6) .MODEL DbodyMOD D (IS=10e-12 n=1 RS=1.2e-3 TRS1=3e-3 TRS2=1e-6 + CJO=0.27e-9 M=0.39 TT=3e-9 XTI=1) ;0.81 .MODEL DSchottkyMOD D (IS=3.2e-6 n=1.05 RS=160e-3 TRS1=5e-3 TRS2=1e-6 + CJO=0.27e-9 M=0.39 TT=3e-9 XTI=-18) .MODEL DbreakMOD D (RS=30e-3 TRS1=1e-3 TRS2=1e-6 ) Rsource 7a 7 0.244e-3 Rdrain 5 16 RdrainMOD 1.439e-3 .MODEL RdrainMOD RES (TC1=3.8e-3 TC2=13.5e-6) M_BSIM3 16 6 7a 7a Bsim3 W=5.04 L=0.467e-6 NRS=0 NRD=0 .MODEL Bsim3 NMOS (LEVEL=7 VERSION=3.1 MOBMOD=3 CAPMOD=2 paramchk=1 NQSMOD=0 *Process Parameters + TOX=300e-10 ;Oxide thickness + XJ=0.2e-6 ;Channel depth + NCH=2.12e17 ;Channel concentration *Channel Current + U0=770 VSAT=500000 DROUT=1.2 + DELTA=0.27 PSCBE2=0 RSH=0.244e-3 *Threshold voltage + VTH0=0.63 *Sub-threshold characteristics + VOFF=-0.21 NFACTOR=0.8 *Junction diodes and Capacitance + LINT=0.098e-6 DLC=0.098e-6 + CGSO=190e-12 CGSL=0 CGDO=10e-12 CGDL=200e-12 ;237 + CJ=0 CF=0 CKAPPA=0.25 * Temperature parameters + KT1=-0.6 KT2=0 UA1=0.8e-9 + NJ=10) .ENDS FDMS3626S_Q2