.SUBCKT FDMS3600AS_Q1 2 1 3 ****************************************************************** ** Fairchild Discrete Modeling Group ** ****************************************************************** ** Website www.fairchildsemi.com\models ** ****************************************************************** ** (C) Copyright 2010 Fairchild Semiconductor Corporation ** ** All rights reserved ** ** ** ** FDMS3600AS_Q1 Spice model ** ** Revision RevA, 13 December 2010 ** ****************************************************************** *Nom Temp 25 deg C Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Lgate 1 9 2.337e-9 Ldrain 2 5 0.004e-9 Lsource 3 7 1.23e-9 RLgate 1 9 23.37 RLdrain 2 5 0.04 RLsource 3 7 12.3 Rgate 9 6 0.82 * Shielded Gate D_D1 100 5 D_SG_cap D_D2 100 101 D_SG_cap R_R1 101 7 1.97 C_C1 6 101 137e-12 .MODEL D_SG_cap D (IS=1e-9 n=1 RS=1.97e-3 CJO=0.95e-9 M=0.52 t_abs=25) It 7 17 1 Ebreak 11 7 17 7 28.8 Rbreak 17 7 RbreakMOD 1 .MODEL RbreakMOD RES (TC1=0.775e-3 TC2=-0.35e-6) .MODEL DbodyMOD D (IS=3.32e-12 n=1 RS=3.9e-3 TRS1=1.5e-3 TRS2=1e-6 + CJO=0.23e-9 M=0.328 TT=3e-9 XTI=1) .MODEL DbreakMOD D (RS=30e-3 TRS1=1e-3 TRS2=1e-6 ) Rsource 7a 7 0.5e-3 Rdrain 5 16 RdrainMOD 3.1e-3 .MODEL RdrainMOD RES (TC1=2.4e-3 TC2=6.5e-6) M_BSIM3 16 6 7a 7a Bsim3 W=2.90935 L=0.71e-6 NRS=0 NRD=0 .MODEL Bsim3 NMOS (LEVEL=7 VERSION=3.1 MOBMOD=3 CAPMOD=2 paramchk=1 NQSMOD=0 *Process Parameters + TOX=500e-10 ;Oxide thickness + XJ=0.16e-6 ;Channel depth + NCH=1.03e17 ;Channel concentration *Channel Current + U0=670 VSAT=500000 DROUT=1.2 + DELTA=0.2 PSCBE2=0 RSH=8.645e-3 *Threshold voltage + VTH0=2.30 *Sub-threshold characteristics + VOFF=-0.15 NFACTOR=1.60 *Junction diodes and Capacitance + LINT=0.175e-6 DLC=0.175e-6 + CGSO=192e-12 CGSL=0 CGDO=9e-12 CGDL=145e-12 + CJ=0 CF=0 CKAPPA=0.65 * Temperature parameters + KT1=-1.3 KT2=0 UA1=11e-9 + NJ=10) .ENDS FDMS3600AS_Q1 .SUBCKT FDMS3600AS_Q2 2 1 3 *Nom Temp 25 deg C Dbody 7 5 DbodyMOD Dschottky 7 5 DSchottkyMOD Dbreak 5 11 DbreakMOD Lgate 1 9 0.853e-9 Ldrain 2 5 0.004e-9 Lsource 3 7 0.096e-9 RLgate 1 9 8.53 RLdrain 2 5 0.04 RLsource 3 7 0.96 Rgate 9 6 0.71 * Shielded Gate D_D1 100 5 D_SG_cap D_D2 100 101 D_SG_cap R_R1 101 7 0.72 C_C1 6 101 280e-12 .MODEL D_SG_cap D (IS=1e-9 n=1 RS=0.72e-3 CJO=3.5e-9 M=0.52 t_abs=25) It 7 17 1 Ebreak 11 7 17 7 30 Rbreak 17 7 RbreakMOD 1 .MODEL RbreakMOD RES (TC1=0.75e-3 TC2=-1e-6) .MODEL DbodyMOD D (IS=7.19e-12 n=1 RS=0.8e-3 TRS1=1.5e-3 TRS2=1e-6 + CJO=0.46e-9 M=0.355 TT=3e-9 XTI=2) .MODEL DSchottkyMOD D (IS=6.056e-6 n=1 RS=32e-3 TRS1=1.5e-3 TRS2=1e-6 + CJO=0.46e-9 M=0.355 TT=3e-9 XTI=-18) .MODEL DbreakMOD D (RS=30e-3 TRS1=1e-3 TRS2=1e-6 ) Rsource 7a 7 0.162e-3 Rdrain 5 16 RdrainMOD 0.92e-3 .MODEL RdrainMOD RES (TC1=2.2e-3 TC2=9e-6) M_BSIM3 16 6 7a 7a Bsim3 W=9.4637825 L=0.71e-6 NRS=0 NRD=0 .MODEL Bsim3 NMOS (LEVEL=7 VERSION=3.1 MOBMOD=3 CAPMOD=2 paramchk=1 NQSMOD=0 *Process Parameters + TOX=500e-10 ;Oxide thickness + XJ=0.16e-6 ;Channel depth + NCH=1.2e17 ;Channel concentration *Channel Current + U0=725 VSAT=500000 DROUT=1.2 + DELTA=0.25 PSCBE2=0 RSH=0.162e-3 *Threshold voltage + VTH0=1.73 *Sub-threshold characteristics + VOFF=-0.1 NFACTOR=1.1 *Junction diodes and Capacitance + LINT=0.165e-6 DLC=0.165e-6 + CGSO=195e-12 CGSL=0 CGDO=7.5e-12 CGDL=100e-12 + CJ=0 CF=0 CKAPPA=1.0 * Temperature parameters + KT1=-1.1 KT2=0 UA1=8e-9 + NJ=10) .ENDS FDMS3600AS_Q2