**************** Power Discrete MOSFET Electrical Circuit Model *****************
** Product Name: FDMS039N08B 
** N-Channel Power Trench MOSFET
** Model Type: BSIM3V3
**-------------------------------------------------------------------------------
.SUBCKT FDMS039N08B 2 1 3
*Nom Temp 25 deg C
Dbody 7 5 DbodyMOD
Dbreak 5 11 DbreakMOD
Lgate 1 9 1.884e-9
Ldrain 2 5 0.004e-9
Lsource 3 7 0.329e-9
RLgate 1 9 18.84
RLdrain 2 5 0.04
RLsource 3 7 3.29
Rgate 9 6 0.37
* Shielded  Gate
D_D1 100 5 D_SG_cap
D_D2 100 101 D_SG_cap
R_R1 101 7 0.039
C_C1 6 101 706e-12
.MODEL D_SG_cap D (IS=1e-9 n=1 RS=0.8e-3 CJO=3.2e-9 M=0.4 t_abs=25)
It 7 17 1
Ebreak 11 7 17 7 85
Rbreak 17 7 RbreakMOD 1
.MODEL RbreakMOD RES (TC1=0.5e-3 TC2=-0.8e-6)
.MODEL DbodyMOD D (IS=3.5e-12 n=1 RS=1.5e-3 TRS1=2.7e-3 TRS2=1e-6
+ CJO=1.07e-9 M=0.35 TT=3e-9 XTI=3.5) ;CJO=3.2e-9   CJO=1.07e-9
.MODEL DbreakMOD D (RS=30e-3 TRS1=1e-3 TRS2=1e-6 )
Rsource 7a 7 0.405e-3
Rdrain 5 16 RdrainMOD 2.07e-3
.MODEL RdrainMOD RES (TC1=6.3e-3 TC2=19e-6)
M_BSIM3 16 6 7a 7a Bsim3 W=8.83 L=0.96e-6 NRS=0 NRD=0 as=1e-20 ps=1e-14 pd=1e-14
.MODEL Bsim3 NMOS (LEVEL=7 VERSION=3.1 MOBMOD=3 CAPMOD=2 paramchk=1 NQSMOD=0
*Process Parameters
+ TOX=1000e-10 ;Oxide thickness
+ XJ=0.28e-6 ;Channel depth
+ NCH=1.8e17 ;Channel concentration
*Channel Current
+ U0=800 VSAT=500000 DROUT=1.2
+ DELTA=0.14 PSCBE2=0 RSH=0.405e-3
*Threshold voltage
+ VTH0=2.95
*Sub-threshold characteristics
+ VOFF=-0.1 NFACTOR=1
*Junction diodes and Capacitance
+ LINT=0.16e-6 DLC=0.16e-6
+ CGSO=320e-12 CGSL=0 CGDO=1e-12 CGDL=180e-12 ;CGSO=400e-12
+ CJ=0 CF=0 CKAPPA=0.25
* Temperature parameters
+ KT1=-2.2 KT2=0 UA1=1e-9
+ NJ=10)
.ENDS
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** Creation: Jul.-18-2012 Rev 0.0
** Fairchild Semiconductor