* .SUBCKT FDME820NZT 2 1 3 ****************************************************************** ** Fairchild Discrete Modeling Group ** ****************************************************************** ** Website www.fairchildsemi.com\models ** ****************************************************************** ** (C) Copyright 2011 Fairchild Semiconductor Corporation ** ** All rights reserved ** ** ** ** FDME820NZT Spice model ** ** Revision RevA, 07 Nov 2011 ** ** Revision RevB, 12/12/2018 added gate zener diode ** ****************************************************************** *Nom Temp 25 deg C Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Desd1 91 9 DesdMOD Desd2 91 7 DesdMOD Lgate 1 9 0.85e-9 Ldrain 2 5 0.007e-9 Lsource 3 7 0.261e-9 RLgate 1 9 8.5 RLdrain 2 5 0.07 RLsource 3 7 2.61 Rgate 9 6 2.69 D_D1 100 5 D_SG_cap D_D2 100 101 D_SG_cap R_R1 101 6 1.01 C_C1 101 7 64e-12 .MODEL D_SG_cap D (IS=1e-9 n=1 RS=4e-3 CJO=0.01e-9 M=0.62 t_abs=25) It 7 17 1 Ebreak 11 7 17 7 26.6 Rbreak 17 7 RbreakMOD 1 .MODEL RbreakMOD RES (TC1=0.73e-3 TC2=-0.5e-6) .MODEL DbodyMOD D (IS=6.25e-12 n=1 RS=14.25e-3 TRS1=3e-3 TRS2=1e-6 + CJO=0.003e-9 M=0.9 TT=3e-9 XTI=1) .MODEL DbreakMOD D (RS=30e-3 TRS1=1e-3 TRS2=1e-6 ) .MODEL DesdMOD D(is=1430e-9 xti=9 Bv=13.4 tbv1=-0.04e-3 n=7.6 Rs=12 trs1=-7e-3) Rsource 77 7 7.016e-3 Rdrain 5 16 RdrainMOD 4.85e-3 .MODEL RdrainMOD RES (TC1=7.75e-3 TC2=7e-6) M_BSIM3 16 6 77 77 Bsim3 W=1.17725 L=0.57e-6 NRS=0 NRD=0 .MODEL Bsim3 NMOS (LEVEL=7 VERSION=3.1 MOBMOD=3 CAPMOD=2 paramchk=1 NQSMOD=0 + TOX=240e-10 + XJ=0.13e-6 + NCH=2.1e17 + U0=750 VSAT=500000 DROUT=1.2 + DELTA=0.3 PSCBE2=0 RSH=7.016e-3 + VTH0=0.44 + VOFF=-0.1 NFACTOR=0.9 + LINT=0.14e-6 DLC=0.14e-6 + CGSO=232e-12 CGSL=0 CGDO=135e-12 CGDL=400e-12 + CJ=0 CF=0 CKAPPA=0.8 * Temperature parameters + KT1=-0.58 KT2=0 UA1=6e-9 + NJ=10) .ENDS *