.SUBCKT FDME1023PZT 2 1 3
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**      Fairchild Discrete Modeling Group                       **
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**      Website         www.fairchildsemi.com\models            **
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**      (C) Copyright 2009 Fairchild Semiconductor Corporation  **
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**                     FDME1023PZT Spice model                  **
**                    Revision RevA, 5 May 2010                 **
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*Nom Temp 25 deg C
Dbody 5 7 DbodyMOD 
Dbreak 7 11 DbreakMOD 
Lgate 1 9 0.675e-9
Ldrain 2 5 0.011e-9
Lsource 3 7 0.44e-9
RLgate 1 9 6.75
RLdrain 2 5 0.11
RLsource 3 7 4.4
Rgate 9 6 15.84
It 7 17 1
Ebreak 5 11 17 7 -22
Rbreak 17 7 RbreakMOD 1 
.MODEL RbreakMOD RES (TC1=0.66e-3 TC2=-0.4e-6)
.MODEL DbodyMOD D (IS=0.3e-9 n=1 RS=260e-3 TRS1=5e-3 TRS2=10e-6
+ CJO=0.09e-9 M=0.7 TT=20e-9 XTI=-10)
.MODEL DbreakMOD D (RS=100e-3 TRS1=1e-3 TRS2=1e-6 )
Rsource 7a 7 15.134e-3
Rdrain 5 16 RdrainMOD 63.0e-3
.MODEL RdrainMOD RES (TC1=3.2e-3 TC2=2e-6)
M_BSIM3 16 6 7a 7a Bsim3 W=0.37 L=1.56e-6 NRS=0 NRD=0
.MODEL Bsim3 PMOS (LEVEL=7 VERSION=3.1 MOBMOD=3 CAPMOD=2 paramchk=1 NQSMOD=0
*Process Parameters
+ TOX=160e-10 ;Oxide thickness
+ XJ=0.26e-6 ;Channel depth
+ NCH=1.95e17 ;Channel concentration
*Channel Current
+ U0=200 VSAT=500000 DROUT=1.8
+ DELTA=0.45 PSCBE2=0.00001 RSH=15.134e-3
*Threshold voltage
+ VTH0=-0.5
*Sub-threshold characteristics
+ VOFF=-0.1 NFACTOR=1
*Junction diodes and Capacitance
+ LINT=0.55e-6 DLC=0.55e-6 
+ CGSO=120e-12 CGSL=0 CGDO=41.6e-12 CGDL=1001e-12 
+ CJ=0 CF=0 CKAPPA=0.2
* Temperature parameters 
+ KT1=-0.67 KT2=0 UA1=8.4e-9
+ NJ=10)
.ENDS