.SUBCKT FDMD84100 2 1 3 +params: tau=50 igain=950 fs=1500 ****************************************************************** ** Fairchild Discrete Modeling Group ** ****************************************************************** ** Website www.fairchildsemi.com\models ** ****************************************************************** ** (C) Copyright 2013 Fairchild Semiconductor Corporation ** ** All rights reserved ** ** ** ** FDMD84100 Spice model ** ** Revision RevA, 24 December 2013 ** ****************************************************************** *Nom Temp 25 deg C Dbody 7 5 Dbody_trr Dbreak 5 11 DbreakMOD Lgate 1 9 0.161e-9 Ldrain 2 5 0.006e-9 Lsource 3 7 0.044e-9 RLgate 1 9 1.61 RLdrain 2 5 0.06 RLsource 3 7 0.44 Rgate 9 6 1.29 H1 161 141 V_H1 {tau} V_H1 151 7 0 V10 5 161 0 F1 7 161 V_F1 {-igain} V_F1 171 141 0V D3 151 161 Dbody_trr .MODEL Dbody_trr D (IS=1.4e-12 n=1.01 RS=3.9e-3 TRS1=1.4e-3 TRS2=1e-6 + CJO=0.23e-9 M=0.2 TT=0 XTI=2.75) R9 131 171 {tau*fs} C2 161 131 1p D_D1 100 5 D_SG_cap D_D2 100 101 D_SG_cap R_R1 101 7 3.78 C_C1 6 101 177e-12 .MODEL D_SG_cap D (IS=1e-9 n=1 RS=5e-3 CJO=0.92e-9 M=0.6 t_abs=25) It 7 17 1 Ebreak 11 7 17 7 110.1 Rbreak 17 7 RbreakMOD 1 .MODEL RbreakMOD RES (TC1=0.705e-3 TC2=-0.2e-6) .MODEL DbreakMOD D (RS=8e-3 TRS1=1e-3 TRS2=1e-6 ) Rsource 7a 7 0.29e-3 Rdrain 5 16 RdrainMOD 11e-3 .MODEL RdrainMOD RES (TC1=7.7e-3 TC2=26.5e-6) M_BSIM3 16 6 7a 7a Bsim3 W=1.8196248 L=1.15e-6 NRS=0 NRD=0 .MODEL Bsim3 NMOS (LEVEL=7 VERSION=3.1 MOBMOD=3 CAPMOD=2 paramchk=1 NQSMOD=0 + TOX=1000e-10 + XJ=0.62e-6 + NCH=0.98e17 + U0=670 VSAT=500000 DROUT=1.8 + DELTA=0.04 PSCBE2=0 RSH=0.29e-3 + VTH0=3.55 + VOFF=-0.13 NFACTOR=1.3 + LINT=0.175e-6 DLC=0.175e-6 + CGSO=75e-12 CGSL=0 CGDO=1e-12 CGDL=100e-12 + CJ=0 CF=0 CKAPPA=0.95 + KT1=-1.84 KT2=0 UA1=4e-9 + NJ=10) .ENDS *