.SUBCKT FDMC8676 2 1 3
*Nom Temp 25 deg C
Dbody 7 5 DbodyMOD
Dbreak 5 11 DbreakMOD
Lgate 1 9 1.275e-9
Ldrain 2 5 0.005e-9
Lsource 3 7 0.119e-9
RLgate 1 9 12.75
RLdrain 2 5 0.05
RLsource 3 7 1.19
Rgate 9 6 0.88
It 7 17 1
Ebreak 11 7 17 7 34
Rbreak 17 7 RbreakMOD 1
.MODEL RbreakMOD RES (TC1=1e-3 TC2=1e-6 )
.MODEL DbodyMOD D (IS=60e-12 n=1.1 RS=2.447e-3 TRS1=1.5e-3 TRS2=0
+ CJO=1.9e-9 M=0.4 TT=0.1e-9 XTI=0.1)
.MODEL DbreakMOD D (RS=0.13 TRS1=1e-3 TRS2=1e-6 )
Rdrain 5 16 RdrainMOD 3.8e-3
.MODEL RdrainMOD RES (TC1=4.4e-3 TC2=3.2e-6)
M_BSIM3 16 6 7 7 Bsim3 W= 3.67 L=0.77e-6 NRS=1 NRD=0
.MODEL Bsim3 NMOS (LEVEL=7 VERSION=3.1 MOBMOD=3 CAPMOD=2 paramchk=1 NQSMOD=0
*Process Parameters
+ TOX= 400e-10 ;Oxide thickness
+ XJ= 0.76e-6 ;Channel depth
+ NCH= 2.4e17 ;Channel concentration
*Channel Current
+ U0=750 VSAT=500000 DROUT=1.2
+ DELTA=0.4 PSCBE2=0 RSH=0.4e-3
*Threshold voltage
+ VTH0=1.255
*Sub-threshold characteristics
+ VOFF=-0.15 NFACTOR=0.9
*Junction diodes and Capacitance
+ LINT=0.12e-6 DLC=0.085e-6
+ CGSO=0.01e-12 CGSL=0 CGDO=25e-12 CGDL=64e-12
+ CJ=0 CF=0 CKAPPA=0.25
* Temperature parameters
+ KT1=-1.0 KT2=0 UA1=3e-9
+ NJ=10)
* Rev.A		SP		10/11/2007
.ENDS