.SUBCKT FDMC86160 2 1 3 + params: tau=40 igain=400 fs=600 ****************************************************************** ** Fairchild Discrete Modeling Group ** ****************************************************************** ** Website www.fairchildsemi.com\models ** ****************************************************************** ** (C) Copyright 2012 Fairchild Semiconductor Corporation ** ** All rights reserved ** ** ** ** FDMC86160 Spice model ** ** Revision RevB, 24 Oct 2014 ** ****************************************************************** *Nom Temp 25 deg C Dbreak 5 11 DbreakMOD Lgate 1 9 0.517e-9 Ldrain 2 5 0.004e-9 Lsource 3 7 0.052e-9 RLgate 1 9 5.17 RLdrain 2 5 0.41 RLsource 3 7 0.52 Rgate 9 6 0.37 H1 161 141 V_H1 {tau} V_H1 151 7 0V V10 5 161 0 F1 7 161 V_F1 {-igain} V_F1 171 141 0V D2 151 161 DbodyMOD .MODEL DbodyMOD D (IS=0.725e-12 n=1 RS=1.5e-3 TRS1=3.5e-3 TRS2=1e-6 + CJO=0.4e-9 M=0.28 TT=0 XTI=4.2) R9 131 171 {tau*fs} C2 161 131 1p D_D1 100 5 D_SG_cap D_D2 100 101 D_SG_cap R_R1 101 7 0.37 C_C1 6 101 117e-12 .MODEL D_SG_cap D (IS=1e-9 n=1 RS=5e-3 CJO=1.2e-9 M=0.6 t_abs=25) It 7 17 1 Ebreak 11 7 17 7 108.35 Rbreak 17 7 RbreakMOD 1 .MODEL RbreakMOD RES (TC1=0.71e-3 TC2=-0.38e-6) .MODEL DbreakMOD D (RS=8e-3 TRS1=1e-3 TRS2=1e-6 ) Rsource 7a 7 0.489e-3 Rdrain 5 16 RdrainMOD 7.4e-3;1.455e-3 .MODEL RdrainMOD RES (TC1=7.5e-3 TC2=24e-6) M_BSIM3 16 6 7a 7a Bsim3 W=2.38 L=1.15e-6 NRS=0 NRD=0 .MODEL Bsim3 NMOS (LEVEL=7 VERSION=3.1 MOBMOD=3 CAPMOD=2 paramchk=1 NQSMOD=0 + TOX=1000e-10 + XJ=0.62e-6 + NCH=0.94e17 + U0=700 VSAT=500000 DROUT=1.8 + DELTA=0.04 PSCBE2=0 RSH=0.489e-3 + VTH0=3.45 + VOFF=-0.13 NFACTOR=1.3 + LINT=0.175e-6 DLC=0.175e-6 + CGSO=110e-12 CGSL=0 CGDO=0.5e-12 CGDL=145e-12 + CJ=0 CF=0 CKAPPA=1 + KT1=-2 KT2=0 UA1=7e-9 + NJ=10) .ENDS