.SUBCKT FDMC7660S 2 1 3
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**      Fairchild Discrete Modeling Group                       **
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**      Website         www.fairchildsemi.com\models            **
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**      (C) Copyright 2009 Fairchild Semiconductor Corporation  **
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**                      FDMC7660S Spice model                   **
**                    Revision RevA, 23 Feb 2010                **
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*Nom Temp 25 deg C
Dbody 7 5 DbodyMOD 
Dschottky 7 5 DSchottkyMOD 
Dbreak 5 11 DbreakMOD 
Lgate 1 9 0.517e-9
Ldrain 2 5 0.005e-9
Lsource 3 7 0.09e-9
RLgate 1 9 5.17
RLdrain 2 5 0.05
RLsource 3 7 0.9
Rgate 9 6 0.71
* Shielded  Gate  
D_D1 100 5 D_SG_cap
D_D2 100 101 D_SG_cap
R_R1 101 7 1.29
C_C1 6 101 197e-12
.MODEL D_SG_cap D (IS=1e-9 n=1 RS=4e-3 CJO=4.5e-9 M=0.6 t_abs=25)
It 7 17 1
Ebreak 11 7 17 7 33
Rbreak 17 7 RbreakMOD 1 
.MODEL RbreakMOD RES (TC1=0.5e-3 TC2=-1e-6)
.MODEL DbodyMOD D (IS=13.382e-12 n=1.04 RS=0.95e-3 TRS1=1.5e-3 TRS2=1e-6 
+ CJO=0.47e-9 M=0.34 TT=3e-9 XTI=1)
.MODEL DSchottkyMOD D (IS=4.194e-6 n=1 RS=45e-3 TRS1=1.5e-3 TRS2=1e-6 
+ CJO=0.47e-9 M=0.34 TT=3e-9 XTI=-18)
.MODEL DbreakMOD D (RS=30e-3 TRS1=1e-3 TRS2=1e-6 )
Rsource 7a 7 0.236e-3
Rdrain 5 16 RdrainMOD 1.22e-3
.MODEL RdrainMOD RES (TC1=3.5e-3 TC2=10.5e-6)
M_BSIM3 16 6 7a 7a Bsim3 W=7.05 L=1.22e-6 NRS=0 NRD=0
.MODEL Bsim3 NMOS (LEVEL=7 VERSION=3.1 MOBMOD=3 CAPMOD=2 paramchk=1 NQSMOD=0
*Process Parameters
+ TOX=500e-10 ;Oxide thickness
+ XJ=0.16e-6 ;Channel depth
+ NCH=1.9e17 ;Channel concentration
*Channel Current
+ U0=1250 VSAT=500000 DROUT=1.2
+ DELTA=0.4 PSCBE2=0.00001 RSH=0.236e-3
*Threshold voltage
+ VTH0=1.22
*Sub-threshold characteristics
+ VOFF=-0.1 NFACTOR=1.1
*Junction diodes and Capacitance
+ LINT=0.375e-6 DLC=0.375e-6 
+ CGSO=112e-12 CGSL=10e-12 CGDO=8.5e-12 CGDL=170e-12 
+ CJ=0 CF=0 CKAPPA=0.15
* Temperature parameters 
+ KT1=-1.1 KT2=0 UA1=2.5e-10; UA1=3e-9
+ NJ=10)
.ENDS