.SUBCKT FDMC6679AZ 2 1 3
*Nom Temp 25 deg C
Dbody 5 7 DbodyMOD
Dbreak 7 11 DbreakMOD
Lgate 1 9 1.625e-9
Ldrain 2 5 0.005e-9
Lsource 3 7 0.054e-9
RLgate 1 9 16.25
RLdrain 2 5 0.05
RLsource 3 7 0.54
Rgate 9 6 5.32
It 7 17 1
Ebreak 5 11 17 7 -32.8
Rbreak 17 7 RbreakMOD 1
.MODEL RbreakMOD RES (TC1=0.74e-3 TC2=-0.4e-6)
.MODEL DbodyMOD D (IS=3.0e-12 n=1 RS=7.3e-3 TRS1=2e-3 TRS2=1e-6
+ CJO=2.6e-10 M=0.5 TT=0.1e-9 XTI=3)
.MODEL DbreakMOD D (RS=100e-3 TRS1=1e-3 TRS2=1e-6 )
Rsource 7a 7 0.735e-3
Rdrain 5 16 RdrainMOD 4.8e-3
.MODEL RdrainMOD RES (TC1=4.35e-3 TC2=5.8e-6)
M_BSIM3 16 6 7a 7a Bsim3 W=6.74 L=1.1e-6 NRS=0 NRD=0
.MODEL Bsim3 PMOS (LEVEL=7 VERSION=3.1 MOBMOD=3 CAPMOD=2 paramchk=1 NQSMOD=0
*Process Parameters
+ TOX=550e-10 ;Oxide thickness
+ XJ=0.3e-6 ;Channel depth
+ NCH=1.36e17 ;Channel concentration
*Channel Current
+ U0=230 VSAT=500000 DROUT=1.8
+ DELTA=0.3 PSCBE2=0.00001 RSH=0.735e-3
*Threshold voltage
+ VTH0=-2.08
*Sub-threshold characteristics
+ VOFF=-0.16 NFACTOR=1
*Junction diodes and Capacitance
+ LINT=0.3e-6 DLC=0.3e-6
+ CGSO=80e-12 CGSL=43e-12 CGDO=29.3e-12 CGDL=354e-12
+ CJ=0 CF=0 CKAPPA=1.2
* Temperature parameters
+ KT1=-1.0 KT2=0 UA1=2.8e-9
+ NJ=10)
* FDMC6679AZ (Rev.A)	11/5/2008
* SP
.ENDS