.SUBCKT FDMC610P 2 1 3 +params: tau=10 igain=10 fs=1000 ****************************************************************** ** Fairchild Discrete Modeling Group ** ****************************************************************** ** Website www.fairchildsemi.com\models ** ****************************************************************** ** (C) Copyright 2013 Fairchild Semiconductor Corporation ** ** All rights reserved ** ** ** ** FDMC610P PSpice model ** ** Revision RevA, 29 November 2013 ** ****************************************************************** *Nom Temp 25 deg C Dbreak 7 11 DbreakMOD Lgate 1 9 0.517e-9 Ldrain 2 5 0.005e-9 Lsource 3 7 0.112e-9 RLgate 1 9 5.17 RLdrain 2 5 0.05 RLsource 3 7 1.12 Rgate 9 6 4.03 H1 161 141 V_H1 {tau} V_H1 151 5 0V V10 7 161 0 F1 5 161 V_F1 {-igain} V_F1 171 141 0V D3 151 161 Dbody_trr .MODEL Dbody_trr D (IS=200e-12 n=1 RS=4e-3 TRS1=1.5e-3 TRS2=1e-6 + CJO=0.15e-9 M=0.23 TT=0 XTI=-3) R9 131 171 {tau*fs} C2 161 131 1p D_D1 100 5 D_SG_cap D_D2 100 101 D_SG_cap R_R1 101 7 9.16 C_C1 6 101 960e-12 .MODEL D_SG_cap D (IS=1e-9 n=1 RS=5e-3 CJO=0.58e-9 M=0.38 t_abs=25) It 7 17 1 Ebreak 5 11 17 7 -20 Rbreak 17 7 RbreakMOD 1 .MODEL RbreakMOD RES (TC1=0.8e-3 TC2=-1e-6) .MODEL DbreakMOD D (RS=30e-3 TRS1=1e-3 TRS2=1e-6 ) Rsource 7a 7 0.154e-3 Rdrain 5 16 RdrainMOD 2.25e-3 .MODEL RdrainMOD RES (TC1=1.8e-3 TC2=0.2e-6) M_BSIM3 16 6 7a 7a Bsim3 W=8.25 L=0.59e-6 NRS=0 NRD=0 .MODEL Bsim3 PMOS (LEVEL=7 VERSION=3.1 MOBMOD=3 CAPMOD=2 paramchk=1 NQSMOD=0 + TOX=160e-10 + XJ=0.15e-6 + NCH=1.6e17 + U0=250 VSAT=500000 DROUT=1.8 + DELTA=0.4 PSCBE2=0 RSH=0.154e-3 + VTH0=-0.845 + VOFF=-0.13 NFACTOR=1.4 + LINT=0.17e-6 DLC=0.17e-6 + CGSO=464e-12 CGSL=0 CGDO=120e-12 CGDL=240e-12 + CJ=0 CF=0 CKAPPA=1 + KT1=-0.55 KT2=0 UA1=8e-9 + NJ=10) .ENDS *