.SUBCKT FDMC2674 2 1 3    
*Nom Temp=25 deg C
Dbody 7 5 DbodyMOD
Dbreak 5 11 DbreakMOD
Lgate 1 9 1.7n
Ldrain 2 5 1.0n
Lsource 3 7 0.1n
RLgate 1 9 17
RLdrain 2 5 10
RLsource 3 7 1
Rgate 9 6 0.72
It 7 17 1
Ebreak 11 7 17 7 245.5
Rbreak 17 7 RbreakMOD 1
.MODEL RbreakMOD RES (TC1=1.1e-3 TC2=-1e-6)
.MODEL DbodyMOD D (IS=2.0e-12 n=1.04 RS=18m TRS1=1.6e-3 TRS2=1e-6 
+ CJO=3.8e-10 M=0.45 TT=90n XTI=1 )
.MODEL DbreakMOD D (RS=0.1 TRS1=1e-3 TRS2=1e-6)
Rdrain 5 16 RdrainMOD 281.7m
.MODEL RdrainMOD RES (TC1=7.7e-3 TC2=1.9e-5)
M_BSIM3 16 6 7 7 Bsim3 W=1.38 L=1.99u NRS=1
.MODEL  Bsim3 NMOS ( LEVEL=7 VERSION=3.1 MOBMOD=3 CAPMOD=2 paramchk=1 NQSMOD=0
*Process Parameters
+ TOX=1020e-10 ;Oxide thickness
+ XJ=1.73u ;Channel depth
+ NCH=1.45e17 ;Channel concentration
*Channel Current
+ U0=1200 VSAT=5e5 DROUT=2.5
+ DELTA=0.1 PSCBE2=0 RSH=2.4m   
*Threshold voltage
+ VTH0=3.54
*Sub-threshold characteristics
+ VOFF=-0.25 NFACTOR=0.9
*Junction diodes and Capacitance
+ LINT=0.323u DLC=0.323u 
+ CGSO=170p CGSL=0p CGDO=0p CGDL=120p
+ CJ=0 CF=0 CKAPPA=1.5  
* Temperature parameters
+ KT1=-2.2 KT2=0 UA1=1.0e-8 
+ NJ=10)
* 11 May 2006 Rev.A1_SP
.ENDS