.SUBCKT FDMA510PZ 2 1 3
*Nom Temp 25 deg C
Dbody 5 7 DbodyMOD
Dbreak 7 11 DbreakMOD
Lgate 1 9 0.568e-9
Ldrain 2 5 0.007e-9
Lsource 3 7 0.148e-9
RLgate 1 9 5.68
RLdrain 2 5 0.07
RLsource 3 7 1.48
Rgate 9 6 14.32
It 7 17 1
Ebreak 5 11 17 7 -22.22
Rbreak 17 7 RbreakMOD 1
.MODEL RbreakMOD RES (TC1=0.64e-3 TC2=0.1e-6)
.MODEL DbodyMOD D (IS=1.0e-9 n=1 RS=35e-3 TRS1=1e-3 TRS2=1e-6
+ CJO=0.1e-9 M=0.5 TT=1e-10 XTI=-10)
.MODEL DbreakMOD D (RS=100e-3 TRS1=1e-3 TRS2=1e-6 )
Rdrain 5 16 RdrainMOD 15.4e-3
.MODEL RdrainMOD RES (TC1=4.2e-3 TC2=2e-6)
M_BSIM3 16 6 7 7 Bsim3 W= 1.6692262 L=1.2e-6 NRS=1 NRD=0
.MODEL Bsim3 PMOS (LEVEL=7 VERSION=3.1 MOBMOD=3 CAPMOD=2 paramchk=1 NQSMOD=0
*Process Parameters
+ TOX= 160e-10 ;Oxide thickness
+ XJ= 0.26e-6 ;Channel depth
+ NCH= 1.95e17 ;Channel concentration
*Channel Current
+ U0=250 VSAT=500000 DROUT=1.8
+ DELTA=0.35 PSCBE2=0 RSH=7e-3
*Threshold voltage
+ VTH0=-0.5
*Sub-threshold characteristics
+ VOFF=0.05 NFACTOR=1.1
*Junction diodes and Capacitance
+ LINT=0.3e-6 DLC=0.37e-6
+ CGSO=106e-12 CGSL=0 CGDO=1e-12 CGDL=1150e-12
+ CJ=0 CF=0 CKAPPA=0.4
* Temperature parameters
+ KT1=-0.55 KT2=0 UA1=5.5e-9
+ NJ=10)
* RevA	SP	9/12/2007
.ENDS