.SUBCKT FDMA291P 2 1 3
*Nom Temp=25 deg C
Dbody 5 7 DbodyMOD
Dbreak 7 11 DbreakMOD
Lgate 1 9 0.81e-9
Ldrain 2 5 0.5e-9
Lsource 3 7 0.11e-9
RLgate 1 9 8.1
RLdrain 2 5 5
RLsource 3 7 1.1
Rgate 9 6 7
It 7 17 1
Ebreak 5 11 17 7 -20.8
Rbreak 17 7 RbreakMOD 1
.MODEL RbreakMOD RES (TC1=6.3e-4 TC2=1e-7)
.MODEL DbodyMOD D (IS=10.5e-11 n=1.2 RS=15.2e-3 TRS1=1e-3 TRS2=1e-6
+ CJO=2.4e-10 M=0.3 TT=1e-10 XTI=0.5)
.MODEL DbreakMOD D (RS=0.25 TRS1=1e-3 TRS2=1e-6)
Rdrain 5 16 RdrainMOD 24.6e-3
.MODEL RdrainMOD RES (TC1=2.9e-3 TC2=5e-6 R=1)
M_BSIM3 16 6 7 7 Bsim3 W=0.658 L=1.21e-6 NRS=1 NRD=0
.MODEL  Bsim3 PMOS ( LEVEL=7 VERSION=3.1 MOBMOD=3 CAPMOD=2 paramchk=1 NQSMOD=0
*Process Parameters
+ TOX=160e-10 ;Oxide thickness
+ XJ=0.9e-6 ;Channel depth
+ NCH=2e17 ;Channel concentration
***Channel Current
+U0=200 vsat=5e5 drout=2
+ DELTA=0.18 PSCBE2=1e-5 RSH=2.5e-3
*Threshold voltage
+ VTH0=-0.69
*Sub-threshold characteristics
+ VOFF=-0.15 NFACTOR=1.0
*Junction diodes and Capacitance
+ LINT=0.37e-6 DLC=0.37e-6
+ CGSO=250e-12 CGSL=500e-12 CGDO=10e-12 CGDL=1180e-12
+ CJ=0 CF=0 CKAPPA=0.6
* Temperature parameters
+ KT1=-0.55 KT2=0 UA1=1.8e-9
+ NJ=10 )
*20 June 2007 Rev.B_SP
.ENDS