.SUBCKT FDMA1023PZ 2 1 3
*Nom Temp=25 deg C
Dbody 5 7 DbodyMOD
Dbreak 7 11 DbreakMOD
Ebreak 5 11 17 7 -21.3
Lgate 1 9 0.54e-9
Ldrain 2 5 0.5e-9 
Lsource 3 7 0.26e-9
RLgate 1 9 5.4
RLdrain 2 5 5
RLsource 3 7 2.6
Rgate 9 6 16
It 7 17 1
Rbreak 17 7 RbreakMOD 1
.MODEL RbreakMOD RES (TC1=7.2e-4 TC2=-2e-7)
.MODEL DbodyMOD D (IS=4e-10 n=1.05 RS=0.062 TRS1=1e-3 TRS2=1e-6
+ CJO=8.0e-11 M=0.25 TT=8.0e-9 XTI=1)
.MODEL DbreakMOD D (RS=0.35 TRS1=1e-3 TRS2=1e-6)
Rdrain 5 16 RdrainMOD 45m
.MODEL RdrainMOD RES (TC1=3.1e-3 TC2=4e-6 R=1 )
M_BSIM3 16 6 7 7 M_MOD W=0.640 L=1.2u NRS=1 NRD=0
.MODEL  M_MOD PMOS (LEVEL=7 VERSION=3.1 MOBMOD=3 CAPMOD=2 paramchk=1 NQSMOD=0
*Process Parameters
+ TOX=160e-10 ;Oxide thickness
+ XJ=0.26u ;Channel depth
+ NCH=2.3e17 ;Channel concentration
*Channel Current
+U0=200 vsat=1e5 DROUT=2
+ DELTA=0.1 PSCBE2=0 RSH=1m
*Threshold voltage
+ VTH0=-0.55
*Sub-threshold characteristics
+ VOFF=-0.11 NFACTOR=1.0
*Junction diodes and Capacitance
+ DLC=0.3u LINT=0.3u 
+ CGSO=1p CGSL=0p CGDO=10p CGDL=900p 
+ CF=0 CJ=0 CKAPPA=0.8
* Temperature parameters
+ KT1=-0.5 KT2=0 UA1=3e-9
+ NJ=10)
* 11 Oct 2006 Rev.A_SP
.ENDS