.SUBCKT FDI025N06 2 1 3 ****************************************************************** ** Fairchild Discrete Modeling Group ** ****************************************************************** ** Website www.fairchildsemi.com\models ** ** Scott Pearson scott.pearson@fairchildsemi.com ** ** Sylvie Tran sylvie.tran@fairchildsemi.com ** ****************************************************************** ** (C) Copyright 2009 Fairchild Semiconductor Corporation ** ** All rights reserved ** ** ** ** FDI025N06 Spice model ** ** Revision RevA, 15 June 2009 (SP) ** ****************************************************************** *Nom Temp 25 deg C Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Lgate 1 9 5.954e-9 Ldrain 2 5 1.44e-9 Lsource 3 7 1.972e-9 RLgate 1 9 59.54 RLdrain 2 5 14.4 RLsource 3 7 19.72 Rgate 9 6 1.4 It 7 17 1 Ebreak 11 7 17 7 66 Rbreak 17 7 RbreakMOD 1 .MODEL RbreakMOD RES (TC1=0.75e-3 TC2=-1e-6) .MODEL DbodyMOD D (IS=38e-12 n=1 RS=1.05e-3 TRS1=3.0e-3 TRS2=1e-6 + CJO=4.08e-9 M=0.52 TT=0.1e-9 XTI=1) .MODEL DbreakMOD D (RS=30e-3 TRS1=1e-3 TRS2=1e-6 ) Rsource 7a 7 0.479e-3 Rdrain 5 16 RdrainMOD 0.815e-3 .MODEL RdrainMOD RES (TC1=8.0e-3 TC2=1.8e-5) M_BSIM3 16 6 7a 7a Bsim3 W=17.635 L=1.58e-6 NRS=0 NRD=0 .MODEL Bsim3 NMOS (LEVEL=7 VERSION=3.1 MOBMOD=3 CAPMOD=2 paramchk=1 NQSMOD=0 *Process Parameters + TOX=1050e-10 ;Oxide thickness + XJ=0.89e-6 ;Channel depth + NCH=1.2e17 ;Channel concentration *Channel Current + U0=700 VSAT=500000 DROUT=1.8 + DELTA=0.2 PSCBE2=0.00001 RSH=0.479e-3 *Threshold voltage + VTH0=3.4 *Sub-threshold characteristics + VOFF=-0.1 NFACTOR=1 *Junction diodes and Capacitance + LINT=0.28e-6 DLC=0.28e-6 + CGSO=187e-12 CGSL=0e-12 CGDO=18e-12 CGDL=265e-12 + CJ=0 CF=0 CKAPPA=1.25 * Temperature parameters + KT1=-2.2 KT2=0 UA1=1.3e-9 + NJ=10) .ENDS