.SUBCKT FDG8850NZ 2 1 3
*Nom Temp=25 deg C
Dbody 7 5 DbodyMOD
Dbreak 5 11 DbreakMOD
Ebreak 11 7 17 7 33
Lgate 1 9 0.474e-9
Ldrain 2 5 1e-9
Lsource 3 7 0.714e-9
RLgate 1 9 4.74
RLdrain 2 5 10
RLsource 3 7 7.14
Rgate 9 6 2.17
It 7 17 1
Rbreak 17 7 RbreakMOD 1
.MODEL RbreakMOD RES (TC1=8.5e-4 TC2=-1.6e-6)
.MODEL DbodyMOD D (IS=3.45e-11 n=1.1 RS=181e-6 TRS1=3e-5 TRS2=1e-5
+ CJO=4.9e-11 M=0.16 TT=1e-10 XTI=-4)
.MODEL DbreakMOD D (RS=8e-4 TRS1=1e-3 TRS2=1e-6)
Rdrain 5 16 RdrainMOD 210e-6
.MODEL RdrainMOD RES (TC1=2.9e-3 TC2=7e-6)
M_BSIM3 16 6 7 7 Bsim3 W=0.1 L=0.98e-6 NRS=1 NRD=0
.MODEL  Bsim3 NMOS (LEVEL=7 VERSION=3.1 MOBMOD=3 CAPMOD=2 paramchk=1 NQSMOD=0
*Process Parameters
+ TOX=240e-10 ;Oxide thickness
+ XJ=0.52e-6 ;Channel depth
+ NCH=1.32e17 ;Channel concentration
*Channel Current
+ U0=700 VSAT=5e5 DROUT=1.8
+ DELTA=0.1 PSCBE2=1e-5 RSH=2.5e-6
*Threshold voltage
+ VTH0=1.05
*Sub-threshold characteristics
+ VOFF=-0.05 NFACTOR=2.5
*Junction diodes and Capacitance
+ LINT=0.165e-6 DLC=0.165e-6
+ CGSO=180e-12 CGSL=0 CGDO=35e-12 CGDL=400e-12
+ CJ=0 CF=0 CKAPPA=2
* Temperature parameters
+ KT1=-0.8 KT2=0 UA1=0.8e-8
+ NJ=10)
*FDG8850NZ (Rev.B) 6/20/07
*ST
.ENDS