* PSpice Model Editor - Version 16.0.0 *$ .SUBCKT FDG410NZ 2 1 3 ****************************************************************** ** Fairchild Discrete Modeling Group ** ****************************************************************** ** Website www.fairchildsemi.com\models ** ** Scott Pearson scott.pearson@fairchildsemi.com ** ** Sylvie Tran sylvie.tran@fairchildsemi.com ** ****************************************************************** ** (C) Copyright 2008 Fairchild Semiconductor Corporation ** ** All rights reserved ** ** ** ** FDG410NZ Spice model ** ** Revision RevA, 18 Feb 2009 (ST) ** ****************************************************************** *Nom Temp 25 deg C Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Lgate 1 9 0.408e-9 Ldrain 2 5 0.1e-9 Lsource 3 7 0.278e-9 RLgate 1 9 4.08 RLdrain 2 5 1 RLsource 3 7 2.78 Rgate 9 6 2.9 It 7 17 1 Ebreak 11 7 17 7 22 Rbreak 17 7 RbreakMOD 1 .MODEL RbreakMOD RES (TC1=0.85e-3 TC2=-1e-6) .MODEL DbodyMOD D (IS=4.7e-11 n=1 RS=72.1e-3 TRS1=2e-3 TRS2=1e-6 + CJO=0.159e-9 M=0.5 TT=0.1e-9 XTI=-6) .MODEL DbreakMOD D (RS=30e-3 TRS1=1e-3 TRS2=0) Rsource 7a 7 7.402e-3 Rdrain 5 16 RdrainMOD 38.5e-3 .MODEL RdrainMOD RES (TC1=4e-3 TC2=1e-6) M_BSIM3 16 6 7a 7a Bsim3 W=0.42 L=0.93e-6 NRS=0 NRD=0 .MODEL Bsim3 NMOS (LEVEL=7 VERSION=3.1 MOBMOD=3 CAPMOD=2 paramchk=1 NQSMOD=0 *Process Parameters + TOX=160e-10 ;Oxide thickness + XJ=0.42e-6 ;Channel depth + NCH=1.8e17 ;Channel concentration *Channel Current + U0=700 VSAT=5e5 DROUT=1.2 + DELTA=0.02 PSCBE2=1e-5 RSH=7.402e-3 *Threshold voltage + VTH0=0.8 *Sub-threshold characteristics + VOFF=-0.1 NFACTOR=1 *Junction diodes and Capacitance + LINT=0.145e-6 DLC=0.145e-6 + CGSO=90e-12 CGSL=0-12 CGDO=58e-12 CGDL=548e-12 + CJ=0 CF=0 CKAPPA=0.5 * Temperature parameters + KT1=-0.56 KT2=0 UA1=8.5e-9 + NJ=10) .ENDS *$