.SUBCKT FDG1024NZ 2 1 3
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**      Fairchild Discrete Modeling Group                       **
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**      Website         www.fairchildsemi.com\models            **
**      Scott Pearson   scott.pearson@fairchildsemi.com         **
**      Chris Hanas     chris.hanas@fairchildsemi.com           **
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**      (C) Copyright 2009 Fairchild Semiconductor Corporation  **
**                      All rights reserved                     **
**                                                              **
**                      FDG1024NZ Spice model                   **
**                      Revision RevA, 17 Nov 2009              **
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*Nom Temp 25 deg C
Dbody 7 5 DbodyMOD
Dbreak 5 11 DbreakMOD
Lgate 1 9 0.474e-9
Ldrain 2 5 0.1e-9
Lsource 3 7 0.547e-9
RLgate 1 9 4.74
RLdrain 2 5 1
RLsource 3 7 5.47
Rgate 9 6 2.17
It 7 17 1
Ebreak 11 7 17 7 22.5
Rbreak 17 7 RbreakMOD 1
.MODEL RbreakMOD RES (TC1=0.75e-3 TC2=-0.4e-6)
.MODEL DbodyMOD D (IS=0.2e-12 n=0.9 RS=205e-3 TRS1=2e-3 TRS2=1e-6
+ CJO=0.04e-9 M=0.6 TT=1e-9 XTI=1)
.MODEL DbreakMOD D (RS=30e-3 TRS1=1e-3 TRS2=1e-6 )
Rsource 7a 7 43.915e-3
Rdrain 5 16 RdrainMOD 91e-3
.MODEL RdrainMOD RES (TC1=3.6e-3 TC2=5e-6)
M_BSIM3 16 6 7a 7a Bsim3 W=0.12 L=1.05e-6 NRS=0 NRD=0
.MODEL Bsim3 NMOS (LEVEL=7 VERSION=3.1 MOBMOD=3 CAPMOD=2 paramchk=1 NQSMOD=0
*Process Parameters
+ TOX=240e-10 ;Oxide thickness
+ XJ=0.52e-6 ;Channel depth
+ NCH=1.32e17 ;Channel concentration
*Channel Current
+ U0=870 VSAT=200000 DROUT=2.5
+ DELTA=0.01 PSCBE2=0 RSH=43.915e-3
*Threshold voltage
+ VTH0=0.87
*Sub-threshold characteristics
+ VOFF=-0.1 NFACTOR=1
*Junction diodes and Capacitance
+ LINT=0.18e-6 DLC=0.18e-6
+ CGSO=720e-12 CGSL=0 CGDO=0e-12 CGDL=900e-12
+ CJ=0 CF=0 CKAPPA=1
* Temperature parameters
+ KT1=-0.6 KT2=0 UA1=11e-9
+ NJ=10)
.ENDS FDG1024NZ