.SUBCKT FDFS6N754 2 1 3    
*Nom Temp=25 deg C
Dbody 7 5 DbodyMOD
Dbreak 5 11 DbreakMOD
Lgate 1 9 1.43e-9
Ldrain 2 5 1.0e-9
Lsource 3 7 0.89e-9
RLgate 1 9 14.3
RLdrain 2 5 10
RLsource 3 7 8.9
Rgate 9 6 7.2
It 7 17 1
Ebreak 11 7 17 7 33.2
Rbreak 17 7 RbreakMOD 1
.MODEL RbreakMOD RES (TC1=8.3e-4 TC2=-1e-6)
.MODEL DbodyMOD D (IS=0.08e-12 n=0.99 RS=20.2e-3 TRS1=8e-4 TRS2=3e-6 
+ CJO=0.1e-9 M=0.28 TT=1e-10 XTI=2.5 )
.MODEL DbreakMOD D (RS=8e-2 TRS1=1e-3 TRS2=0)
Rdrain 5 16 RdrainMOD 33e-3
.MODEL RdrainMOD RES (TC1=3.7e-3 TC2=2e-6)
M_BSIM3 16 6 7 7 Bsim3 W=0.379 L=0.95e-6 NRS=1 NRD=0
.MODEL  Bsim3 NMOS ( LEVEL=7 VERSION=3.1 MOBMOD=3 CAPMOD=2 paramchk=1 NQSMOD=0
*Process Parameters
+ TOX=455e-10 ;Oxide thickness
+ XJ=0.48e-6 ;Channel depth
+ NCH=1.43e17 ;Channel concentration
*Channel Current
+ U0=890 VSAT=5e5 DROUT=1.8
+ DELTA=0.2 PSCBE2=1e-5 RSH=7.6e-3   
*Threshold voltage
+ VTH0=1.82
*Sub-threshold characteristics
+ VOFF=-0.22 NFACTOR=1.3
*Junction diodes and Capacitance
+ LINT=0.175e-6 DLC=0.175e-6 
+ CGSO=99e-12 CGSL=0 CGDO=50e-12 CGDL=210e-12
+ CJ=0 CF=0 CKAPPA=1.8  
* Temperature parameters
+ KT1=-0.95 KT2=0 UA1=0.4e-8 
+ NJ=10)
*20 June 2007 Rev.B_RG
.ENDS

* Schottky Diode Model
.MODEL FDFS6N754_Schottky D (BV=26.5 IS=43.4e-6 n=1.1 RS=0.031 TRS1=4.8e-3 
+ XTI=3 EG=0.55
+ NBV=10 CJO=1.0e-9 M=0.7 TT=2.4e-9)