.SUBCKT FDFS2P753Z 2 1 3
*Nom Temp 25 deg C
Dbody 5 7 DbodyMOD 
Dbreak 7 11 DbreakMOD 
Lgate 1 9 1.431e-9
Ldrain 2 5 1e-9
Lsource 3 7 0.844e-9
RLgate 1 9 14.31
RLdrain 2 5 10
RLsource 3 7 8.44
Rgate 9 6 17
It 7 17 1
Ebreak 5 11 17 7 -33.5
Rbreak 17 7 RbreakMOD 1 
.MODEL RbreakMOD RES (TC1=0.76e-3 TC2=-0.4e-6)
.MODEL DbodyMOD D (IS=1.8e-12 n=1.1 RS=43e-3 TRS1=1e-3 TRS2=1e-6 
+ CJO=0.085e-9 M=0.3 TT=15e-9 XTI=3)
.MODEL DbreakMOD D (RS=100e-3 TRS1=1e-3 TRS2=1e-6 )
Rdrain 5 16 RdrainMOD 66.8e-3
.MODEL RdrainMOD RES (TC1=3.7e-3 TC2=2.5e-6)
M_BSIM3 16 6 7 7 Bsim3 W= 0.72 L=1.1e-6 NRS=1 NRD=0
.MODEL Bsim3 PMOS (LEVEL=7 VERSION=3.1 MOBMOD=3 CAPMOD=2 paramchk=1 NQSMOD=0
*Process Parameters
+ TOX= 550e-10 ;Oxide thickness
+ XJ= 0.3e-6 ;Channel depth
+ NCH= 1.36e17 ;Channel concentration
*Channel Current
+ U0=270 VSAT=500000 DROUT=1.8
+ DELTA=0.4 PSCBE2=0 RSH=3.649e-3
*Threshold voltage
+ VTH0=-2.15
*Sub-threshold characteristics
+ VOFF=-0.29 NFACTOR=1		
*Junction diodes and Capacitance		
+ LINT=0.3e-6 DLC=0.3e-6 		
+ CGSO=100e-12 CGSL=0 CGDO=10e-12 CGDL=365e-12 		
+ CJ=0 CF=0 CKAPPA=1.8		
* Temperature parameters 		
+ KT1=-1.05 KT2=0 UA1=4e-9
+ NJ=10)		
* 3 Nov 2006 Rev.A_SP
.ENDS   		

.MODEL FDFS2P753Z_Schottky D (BV=21 IS=8.0e-6 n=1.0 RS=0.062 TRS1=5.4e-3 
+ XTI=1 EG=0.6
+ NBV=10 CJO=2.2e-10 M=0.4 TT=12e-9)