.SUBCKT FDD8782 2 1 3    
*Nom Temp=25 deg C
Dbody 7 5 DbodyMOD
Dbreak 5 11 DbreakMOD
Lgate 1 9 2.5e-9
Ldrain 2 5 1.0e-9
Lsource 3 7 0.84e-9
RLgate 1 9 25
RLdrain 2 5 10
RLsource 3 7 8.4
Rgate 9 6 1.8
It 7 17 1
Ebreak 11 7 17 7 27.6
Rbreak 17 7 RbreakMOD 1
.MODEL RbreakMOD RES (TC1=7.5e-4 TC2=-1e-6)
.MODEL DbodyMOD D (IS=1.0e-12 n=0.98 RS=5.2e-3 TRS1=1.5e-3 TRS2=0 
+ CJO=3.3e-10 M=0.45 TT=1e-10 XTI=2.5 )
.MODEL DbreakMOD D (RS=1e-1 TRS1=1e-3 TRS2=0)
Rdrain 5 16 RdrainMOD 4.2e-3
.MODEL RdrainMOD RES (TC1=4.7e-3 TC2=7.0e-6)
M_BSIM3 16 6 7 7 Bsim3 W=1.91 L=0.95e-6 NRS=1 NRD=0
.MODEL  Bsim3 NMOS ( LEVEL=7 VERSION=3.1 MOBMOD=3 CAPMOD=2 paramchk=1 NQSMOD=0
*Process Parameters
+ TOX=455e-10 ;Oxide thickness
+ XJ=0.49e-6 ;Channel depth
+ NCH=1.35e17 ;Channel concentration
*Channel Current
+ U0=950 VSAT=5e5 DROUT=1.8
+ DELTA=0.15 PSCBE2=1e-5 RSH=2.2e-3
*Threshold voltage
+ VTH0=1.93
*Sub-threshold characteristics
+ VOFF=-0.13 NFACTOR=1.1
*Junction diodes and Capacitance
+ LINT=0.185e-6 DLC=0.185e-6 
+ CGSO=67e-12 CGSL=0 CGDO=39e-12 CGDL=260e-12
+ CJ=0 CF=0 CKAPPA=1.8  
* Temperature parameters
+ KT1=-1.1 KT2=0 UA1=0.85e-8 
+ NJ=10)
*18 June 2007 Rev.B_SP
.ENDS