*$ **************** Power Discrete MOSFET Electrical Circuit Model ***************** ** Product Name: FDD4N60NZ ** 600V N-Channel MOSFET and D-PAK ** Model Type: BSIM3V3 **------------------------------------------------------------------------------- .SUBCKT FDD4N60NZ 2 1 3 *Nom Temp=25 deg C Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Ebreak 11 7 17 7 660 Lgate 1 9 1.183e-9 Ldrain 2 5 1.183e-9 Lsource 3 7 9.664e-10 RLgate 1 9 11.83 RLdrain 2 5 11.83 RLsource 3 7 9.664 Rgate 9 6 0.5 It 7 17 1 Rbreak 17 7 RbreakMOD 1 .MODEL RbreakMOD RES (TC1=1.08e-3 TC2=-1.18e-6) .MODEL DbodyMOD D (IS=1.45e-13 N=1.0 RS=1.64e-2 TRS1=2.75e-3 TRS2=1.5e-6 + CJO=4.22e-10 M=0.52 VJ=0.72 TT=1.82e-7 XTI=3 EG=1.18) .MODEL DbreakMOD D (RS=100e-3 TRS1=1.0e-3 TRS2=5.0e-6) Rdrain 5 16 RdrainMOD 1.9 .MODEL RdrainMOD RES (TC1=8.48e-3 TC2=2.19e-5) D_ZENER 7 9 Dzener .MODEL Dzener D (IS=1e-12 N=2.0 BV=45.0 IBV=2.5e-4) M_BSIM3 16 6 7 7 Bsim3 W=0.984 L=2.0e-6 NRS=1 .MODEL Bsim3 NMOS (LEVEL=7 VERSION=3.1 MOBMOD=3 CAPMOD=2 PARAMCHK=1 NQSMOD=0 + TOX=1100e-10 XJ=1.4e-6 NCH=1.43e17 + U0=700 VSAT=5.0e5 DROUT=1.0 + DELTA=0.1 PSCBE2=0 RSH=1.19e-3 + VTH0=4.10 VOFF=-0.1 NFACTOR=1.1 + LINT=3.3e-7 DLC=3.3e-7 FC=0.5 + CGSO=1.05e-15 CGSL=0 CGDO=6.25e-13 + CGDL=1.95e-10 CJ=0 CF=0 + CKAPPA=0.2 KT1=-2.07 KT2=0 + UA1=3.0e-9 NJ=10) .ENDS ******************** Power Discrete MOSFET Thermal Model ************************ ** 600V N-Channel MOSFET and D-PAK **------------------------------------------------------------------------------- .SUBCKT FDD4N60NZ_Thermal TH TL CTHERM1 TH 6 6.04e-5 CTHERM2 6 5 2.84e-4 CTHERM3 5 4 4.02e-4 CTHERM4 4 3 6.14e-4 CTHERM5 3 2 3.62e-3 CTHERM6 2 TL 5.42e-3 RTHERM1 TH 6 1.20e-4 RTHERM2 6 5 5.78e-3 RTHERM3 5 4 8.30e-3 RTHERM4 4 3 6.20e-2 RTHERM5 3 2 3.01e-1 RTHERM6 2 TL 7.22e-1 .ENDS FDD4N60NZ_Thermal **------------------------------------------------------------------------------- ** Creation: Jun.-03-2016 Rev.: 0.0 ** Fairchild Semiconductor