*$ **************** Power Discrete MOSFET Electrical Circuit Model ***************** ** Product Name: FDD18N20LZ ** N-Channel UniFET MOSFET ** 200V, 16A, 125mohm ** Model Type: BSIM3V3 **------------------------------------------------------------------------------- .SUBCKT FDD18N20LZ 2 1 3 *Nom Temp=25 deg C Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Ebreak 11 7 17 7 220 Lgate 1 9 3.626e-9 Ldrain 2 5 2.291e-10 Lsource 3 7 1.892e-9 RLgate 1 9 10 RLdrain 2 5 10 RLsource 3 7 10 Rgate 9 6 0.5 It 7 17 1 Rbreak 17 7 RbreakMOD 1 .MODEL RbreakMOD RES (TC1=1.34e-3 TC2=-1.15e-6) .MODEL DbodyMOD D (IS=1.15e-12 N=1.0 RS=8.64e-3 TRS1=2.35e-3 TRS2=6.85e-6 + CJO=1.16e-9 M=0.55 VJ=0.66 TT=1.15e-7 XTI=3 EG=1.16) .MODEL DbreakMOD D (RS=100e-3 TRS1=1.0e-3 TRS2=5.0e-6) Rdrain 5 16 RdrainMOD 0.10 .MODEL RdrainMOD RES (TC1=7.88e-3 TC2=2.29e-5) Desd 7 9 DesdMOD .MODEL DesdMOD D (IS=1.0e-15 N=1 IBV=5.0e-4 BV=20) M_BSIM3 16 6 7 7 Bsim3 W=2.366 L=2.00e-6 NRS=1 .MODEL Bsim3 NMOS (LEVEL=7 VERSION=3.1 MOBMOD=3 CAPMOD=2 PARAMCHK=1 NQSMOD=0 + TOX=580e-10 XJ=1.04e-6 NCH=1.74e17 + U0=700 VSAT=1.0e5 DROUT=10.0 + DELTA=0.1 PSCBE2=0 RSH=3.19e-4 + VTH0=1.65 VOFF=-0.1 NFACTOR=1.1 + LINT=5.45e-7 DLC=5.45e-7 + CGSO=1.05e-15 CGSL=0 CGDO=5.05e-15 + CGDL=5.28e-10 CJ=0 CF=0 + CKAPPA=0.08 KT1=-0.97 KT2=0 + UA1=1.05e-9 NJ=10) .ENDS *$ ******************** Power Discrete MOSFET Thermal Model ************************ ** 200V N-Channel MOSFET and D-PAK **------------------------------------------------------------------------------- .SUBCKT FDD18N20LZ_Thermal TH TL CTHERM1 TH 6 4.04e-4 CTHERM2 6 5 9.84e-4 CTHERM3 5 4 4.72e-3 CTHERM4 4 3 6.64e-3 CTHERM5 3 2 7.12e-3 CTHERM6 2 TL 8.02e-3 RTHERM1 TH 6 1.50e-3 RTHERM2 6 5 3.40e-2 RTHERM3 5 4 7.80e-2 RTHERM4 4 3 2.29e-1 RTHERM5 3 2 4.91e-1 RTHERM6 2 TL 5.66e-1 .ENDS FDD18N20LZ_Thermal **------------------------------------------------------------------------------- ** Creation: Jul.-01-2022 Rev.: 1.0 ** onsemi *$