*$ **************** Power Discrete MOSFET Electrical Circuit Model ***************** ** Product Name: FDD1600N10ALZ ** 100V N-Channel Power Trench MOSFET ** Model Type: BSIM3V3 **------------------------------------------------------------------------------- .SUBCKT FDD1600N10ALZ 2 1 3 **Nom Temp=25 deg C Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Ebreak 11 7 17 7 110 Lgate 1 9 1.12e-9 Ldrain 2 5 1.45e-9 Lsource 3 7 9.66e-10 RLgate 1 9 11.2 RLdrain 2 5 14.5 RLsource 3 7 9.6 Rgate 9 6 0.5 It 7 17 1 Rbreak 17 7 RbreakMOD 1 .MODEL RbreakMOD RES (TC1=7.46e-4 TC2=-1.15e-6) .MODEL DbodyMOD D (IS=6.05e-14 N=1 RS=2.06e-2 TRS1=1.30e-3 TRS2=1.38e-5 + CJO=1.38e-10 M=0.14 VJ=0.57 TT=3.55e-8 XTI=3 EG=1.12) .MODEL DbreakMOD D (RS=100e-3 TRS1=1e-3 TRS2=1.0e-6) Rdrain 5 16 RdrainMOD 0.124 .MODEL RdrainMOD RES (TC1=6.23e-3 TC2=1.05e-7) M_BSIM3 16 6 7 7 Bsim3 W=0.458 L=2.0e-6 NRS=1 .MODEL Bsim3 NMOS (LEVEL=7 VERSION=3.1 MOBMOD=3 CAPMOD=2 PARAMCHK=1 NQSMOD=0 + TOX=1100e-10 XJ=1.4e-6 NCH=9.24e16 + U0=700 VSAT=5.0e5 DROUT=1.0 + DELTA=0.10 PSCBE2=0 RSH=3.09e-3 + VTH0=1.95 VOFF=-0.1 NFACTOR=1.1 + LINT=3.98e-7 DLC=3.98e-7 FC=0.5 + CGSO=1.05e-14 CGSL=1.0e-15 CGDO=1.05e-11 + CGDL=1.88e-10 CJ=0 CF=0 + CKAPPA=0.2 KT1=-1.45 KT2=0 + UA1=2.0e-9 NJ=10) .ENDS *$ ******************** Power Discrete MOSFET Thermal Model ************************ ** 100V N-Channel MOSFET and D-PAK **------------------------------------------------------------------------------- .SUBCKT FDD1600N10ALZ_Thermal TH TL CTHERM1 TH 6 1.04e-5 CTHERM2 6 5 1.08e-4 CTHERM3 5 4 4.64e-4 CTHERM4 4 3 7.02e-4 CTHERM5 3 2 1.02e-3 CTHERM6 2 TL 2.16e-3 RTHERM1 TH 6 1.20e-1 RTHERM2 6 5 7.20e-1 RTHERM3 5 4 8.85e-1 RTHERM4 4 3 9.05e-1 RTHERM5 3 2 1.28e+0 RTHERM6 2 TL 4.49e+0 .ENDS FDD1600N10ALZ_Thermal **------------------------------------------------------------------------------- ** Creation: Apr.-22-2014 Rev: 0.0 ** Fairchild Semiconductor *$