* PSpice Model Editor - Version 16.3.0 *$ .SUBCKT FDC8602 2 1 3 ****************************************************************** ** Fairchild Discrete Modeling Group ** ****************************************************************** ** Website www.fairchildsemi.com\models ** ****************************************************************** ** (C) Copyright 2009 Fairchild Semiconductor Corporation ** ** All rights reserved ** ** ** ** FDC8602 Spice model ** ** Revision RevA, 3 Feb 2011 ** ****************************************************************** *Nom Temp 25 deg C Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Lgate 1 9 0.695e-9 Ldrain 2 5 0.1e-9 Lsource 3 7 0.413e-9 RLgate 1 9 6.95 RLdrain 2 5 1 RLsource 3 7 4.13 Rgate 9 6 1.07 * Shielded gate D_D1 100 5 D_SG_cap1 D_D2 100 101 D_SG_cap2 R_R1 101 7 1.5 C_C1 6 101 4.3e-12 .MODEL D_SG_cap1 D (IS=1e-9 n=1 RS=4.0e-3 CJO=0.096e-9 M=0.56 t_abs=25) .MODEL D_SG_cap2 D (IS=1e-9 n=1 RS=4.0e-3 CJO=0.015e-9 M=0.6 t_abs=25) It 7 17 1 Ebreak 11 7 17 7 111.5 Rbreak 17 7 RbreakMOD 1 .MODEL RbreakMOD RES (TC1=0.67e-3 TC2=-0.6e-6) .MODEL DbodyMOD D (IS=0.2e-12 n=1 RS=49e-3 TRS1=2.0e-3 TRS2=1e-6 + CJO=0.023e-9 M=0.49 TT=3e-9 XTI=2.75) ;0.07 .MODEL DbreakMOD D (RS=8e-3 TRS1=1e-3 TRS2=1e-6 ) Rsource 7a 7 17.669e-3 Rdrain 5 16 RdrainMOD 190e-3 .MODEL RdrainMOD RES (TC1=6.9e-3 TC2=18e-6) M_BSIM3 16 6 7a 7a Bsim3 W=0.11 L=1.15e-6 NRS=0 NRD=0 .MODEL Bsim3 NMOS (LEVEL=7 VERSION=3.1 MOBMOD=3 CAPMOD=2 paramchk=1 NQSMOD=0 *Process Parameters + TOX=1000e-10 ;Oxide thickness + XJ=0.62e-6 ;Channel depth + NCH=0.95e17 ;Channel concentration *Channel Current + U0=840 VSAT=500000 DROUT=1.8 + DELTA=0.19 PSCBE2=0 RSH=17.669e-3 *Threshold voltage + VTH0=3.18 *Sub-threshold characteristics + VOFF=-0.35 NFACTOR=1 *Junction diodes and Capacitance + LINT=0.175e-6 DLC=0.175e-6 + CGSO=156e-12 CGSL=0 CGDO=3e-12 CGDL=560e-12 ;195 + CJ=0 CF=0 CKAPPA=1.5 * Temperature parameters + KT1=-1.8 KT2=0 UA1=4.5e-9 + NJ=10) .ENDS * *$