*$ *************** Power Discrete MOSFET Electrical Circuit Model ***************** ** Product Name: FDC606P ** Single P-Channel PowerTrench˘ç MOSFET ** -12V, -6A, 26mohm ** Model Type: BSIM3V3 **------------------------------------------------------------------------------ .SUBCKT FDC606P 2 1 3 *Nom Temp=25 deg C Dbody 5 7 DbodyMOD Dbreak 7 11 DbreakMOD Lgate 1 9 1.47e-9 Ldrain 2 5 1.04e-9 Lsource 3 7 1.33e-9 RLgate 1 9 10 RLdrain 2 5 10 RLsource 3 7 10 Rgate 9 6 0.5 It 7 17 1 Ebreak 5 11 17 7 -13 Rbreak 17 7 RbreakMOD 1 .MODEL RbreakMOD RES (TC1=1.06e-3 TC2=-1.05e-6) .MODEL DbodyMOD D (IS=9.12e-10 N=1.0 RS=3.21e-2 TRS1=1.05e-5 TRS2=1.0e-7 + CJO=9.86e-10 M=0.38 VJ=0.54 TT=8.84e-8 XTI=1.0 EG=0.75) .MODEL DbreakMOD D (RS=5.0e-2 TRS1=1e-3 TRS2=1e-6) Rdrain 5 16 RdrainMOD 13.3e-3 .MODEL RdrainMOD RES (TC1=1.63e-3 TC2=3.59e-6) M_BSIM3 16 6 7 7 Bsim3 W=1.32 L=1.75e-6 NRS=1 NRD=0 .MODEL Bsim3 PMOS (LEVEL=7 VERSION=3.1 MOBMOD=3 CAPMOD=2 PARAMCHK=1 NQSMOD=0 + TOX=160e-10 XJ=1.0e-6 NCH=1.0e17 + U0=290 VSAT=1.0e5 DROUT=1.0 + DELTA=0.1 PSCBE2=0 RSH=1.09e-3 + VTH0=-0.75 VOFF=-0.16 NFACTOR=1 + LINT=3.45e-7 DLC=3.45e-7 CGSO=1.02e-15 + CGSL=0 CGDO=1.03e-10 CGDL=7.82e-10 + CJ=0 CF=0 CKAPPA=0.4 + KT1=-0.54 KT2=0 UA1=2.04e-10 + NJ=10) .ENDS *$ ******************* Power Discrete MOSFET Thermal Model ************************* ** Package: Super-SOT-6 ** Minimum pad mounted Rthja=156 C/W **------------------------------------------------------------------------------- .SUBCKT FDC606P_THERMAL TH TL CTHERM1 TH 6 4.05e-05 CTHERM2 6 5 7.14e-04 CTHERM3 5 4 9.82e-04 CTHERM4 4 3 2.46e-03 CTHERM5 3 2 8.03e-03 CTHERM6 2 TL 2.02e-02 RTHERM1 TH 6 9.00e-01 RTHERM2 6 5 2.53e+00 RTHERM3 5 4 3.82e+00 RTHERM4 4 3 8.25e+00 RTHERM5 3 2 2.55e+01 RTHERM6 2 TL 1.09e+02 .ENDS FDC606P_THERMAL **---------------------------------------------------------------------------------------------- ** Creation: Mar.-8-2022 Rev.: 1.1 ** onsemi *$