.SUBCKT FDB8441 2 1 3    
*Nom Temp=25 deg C
Dbody 7 5 DbodyMOD
Dbreak 5 11 DbreakMOD
Lgate 1 9 3.55e-9
Ldrain 2 5 1.0e-9
Lsource 3 7 0.56e-9
RLgate 1 9 35.5
RLdrain 2 5 10
RLsource 3 7 5.6
Rgate 9 6 1.1
It 7 17 1
Ebreak 11 7 17 7 44.8
Rbreak 17 7 RbreakMOD 1
.MODEL RbreakMOD RES (TC1=9.4e-4 TC2=-1.2e-6)
.MODEL DbodyMOD D (IS=2.2e-12 n=0.97 RS=1.2m TRS1=2.5e-3 TRS2=1e-6 
+ CJO=1.8e-9 M=0.45 TT=30n XTI=3.0 )
.MODEL DbreakMOD D (RS=0.1 TRS1=1e-3 TRS2=1e-6)
Rdrain 5 16 RdrainMOD 1.69m
.MODEL RdrainMOD RES (TC1=4.5e-3 TC2=6.5e-6)
M_BSIM3 16 6 7 7 Bsim3 W=24.01 L=1.03u NRS=1
.MODEL  Bsim3 NMOS ( LEVEL=7 VERSION=3.1 MOBMOD=3 CAPMOD=2 paramchk=1 NQSMOD=0
*Process Parameters
+ TOX=455e-10 ;Oxide thickness
+ XJ=0.48u ;Channel depth
+ NCH=3.05e17 ;Channel concentration
*Channel Current
+ U0=3500 VSAT=8e5 DROUT=1.52
+ DELTA=0.2 PSCBE2=0 RSH=0.2m   
*Threshold voltage
+ VTH0=2.45
*Sub-threshold characteristics
+ VOFF=-0.32 NFACTOR=1.0
*Junction diodes and Capacitance
+ LINT=0.12u DLC=0.12u 
+ CGSO=12p CGSL=0 CGDO=5p CGDL=200p
+ CJ=0 CF=0 CKAPPA=2  
* Temperature parameters
+ KT1=-1.4 KT2=0 UA1=1.5e-8 
+ NJ=10)
* 2 Aug 2006 Rev.A_SP
.ENDS